TRANSISTOR A FORTE MOBILITE ELECTRONIQUE ET SON PROCEDE DE FABRICATION

The transistor has a nucleation layer (2) made of semiconductor material with strong resistivity and formed on a semiconductor substrate (1), where the material layer is made of gallium nitrate. A barrier layer (4) made of indium aluminum nitride is formed with large band gap. A two dimensional gas interface is loaded with electrons and positive loads at the level of the nucleation and barrier layers. A passivation layer (6) made of aluminum oxide is formed at a surface of the barrier layer, where the passivation layer is obtained by the oxidation of the barrier layer. An independent claim is also included for a method for fabricating a high electronic mobility transistor.