DISPOSITIF DE TYPE MOSFET PARTIELLEMENT DESERTE COMPORTANT UN ISOLANT DE GRILLE EN DEUX PARTIES ET UTILISATION COMME CELLULE DE MEMOIRE

DISPOSITIF DE TYPE MOSFET PARTIELLEMENT DESERTE COMPORTANT UN ISOLANT DE GRILLE EN DEUX PARTIES ET UTILISATION COMME CELLULE DE MEMOIRE

The memory cell has a MOSFET type device comprising a base substrate (6) and a floating substrate that is made of a semiconductor material. The floating substrate has a grid (3) and a grid insulator (8). The insulator comprises parts (8a, 8b) corresponding to doped zones (3a, 3b) of the grid, respec...

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Bibliographische Detailangaben
1. Verfasser: GUEGAN GEORGES
Format: Patent
Sprache:fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:The memory cell has a MOSFET type device comprising a base substrate (6) and a floating substrate that is made of a semiconductor material. The floating substrate has a grid (3) and a grid insulator (8). The insulator comprises parts (8a, 8b) corresponding to doped zones (3a, 3b) of the grid, respectively. The part (8a) has tunnel resistance that is greater than that of the part (8b) of the insulator. The parts (8a, 8b) have equal thickness and are made of respective materials. The part (8a) has dielectric constant that is less than that of the part (8b). An independent claim is also included for a method for utilizing a dynamic RAM memory cell.