RESISTANCE INTEGREE TRIDIMENSIONNELLE

RESISTANCE INTEGREE TRIDIMENSIONNELLE

The resister has a vertical path along walls (5, 6) and a horizontal path along a base (7) in an N type strongly doped layer. The layer extends on the walls and the base of one trench of a set of parallel trenches (3), where the trenches are made of isolating material. A conductor element (8) connec...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NIZOU SYLVAIN, RENARD BENJAMIN
Format: Patent
Sprache:fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The resister has a vertical path along walls (5, 6) and a horizontal path along a base (7) in an N type strongly doped layer. The layer extends on the walls and the base of one trench of a set of parallel trenches (3), where the trenches are made of isolating material. A conductor element (8) connects the trench to an adjacent trench. An oxide film is formed on the walls before doping the walls and the base of each trench. An independent claim is also included for a method of manufacturing a resister.