MEMOIRE NON VOLATILE A LECTURE SEULE MODIFIABLE PAR REDEFINITION D'UN NIVEAU DE METAL OU DE VIAS

A memory element in an integrated circuit includes several levels of conductive materials separated by insulating levels, each of which is capable of being crossed by conductive vias of an intercalary via level, and at least two connection rails, including several assemblies of successive interconne...

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Bibliographische Detailangaben
Hauptverfasser: LEBOURG PHILIPPE, TESI DAVIDE
Format: Patent
Sprache:fre
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