Protection device for integrated transistor against electrostatic discharge, for use in integrated circuits with output transistors

The protection device (CP) comprises a switching transistor (M11) connected between the gate of an output transistor (TS1) and the ground, the control means (MC) connected to the gate of the switching transistor (M11) for blocking it in the absence of electrostatic discharge at the level of the drai...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SALOME PASCAL, MABBOUX GUY
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE
Online-Zugang:	Volltext bestellen
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