PROCEDE DE FABRICATION D'UNE ELECTRODE DE COMMANDE DE GRILLE POUR TRANSISTOR IGBT

Production of the gate electrode of an insulated-gate bipolar transistor (IGBT) starting with an electrically conducting plate (20) covered with an insulating layer (22) and having connection plots (26,28) to be joined by soldering to connection pads of an integrated circuit chip, includes forming a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHANGEY NICOLAS, RANCHY ERIC, CROUZY SOPHIE, PETITBON ALAIN
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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