SILICIUM MULTICRISTALLIN A SOLIDIFICATION DIRIGEE, SON PROCEDE DE FABRICATION ET SON UTILISATION, ET CELLULES SOLAIRES CONTENANT CE SILICIUM ET LEUR PROCEDE DE FABRICATION
L'invention concerne un silicium multicristallin à solidification dirigée contenant de l'arsenic et/ ou de l'antimoine, un procédé pour sa production et son utilisation, ainsi que des cellules solaires contenant ce silicium et un procédé pour leur production. The present invention rel...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | fre |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HABLER CHRISTIAN WEBER KLAUS WODITSCH PETER LANGE HORST KRUMBE WOLFGANG |
| description | L'invention concerne un silicium multicristallin à solidification dirigée contenant de l'arsenic et/ ou de l'antimoine, un procédé pour sa production et son utilisation, ainsi que des cellules solaires contenant ce silicium et un procédé pour leur production.
The present invention relates to directionally solidified, arsenic- and/or antimony-containing, multicrystalline silicon, a process for the production thereof and its use, and to solar cells containing this silicon and a process for the production thereof. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_FR2762620A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>FR2762620A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_FR2762620A13</originalsourceid><addsrcrecordid>eNqNjk0KwkAMRrtxIeodcoAKWqGup9OMBtIZmZ91KTKuRAv1Vl7SaVF3ghBI-L7HI_Ps6YhJUmigCexJWnJeMJMGAc4w1aRICk9GQ02WDoh5yjWcrJFYI6RRorIfBv3UBp-sboryMZPIHBjdqBRk0yGN9qiFHjv4_pBQxmB_2JfZ7NJdh7h670UGCr08rmN_b-PQd-d4i49W2WJfFmWxEdvdH8gL56tHUg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SILICIUM MULTICRISTALLIN A SOLIDIFICATION DIRIGEE, SON PROCEDE DE FABRICATION ET SON UTILISATION, ET CELLULES SOLAIRES CONTENANT CE SILICIUM ET LEUR PROCEDE DE FABRICATION</title><source>esp@cenet</source><creator>HABLER CHRISTIAN ; WEBER KLAUS ; WODITSCH PETER ; LANGE HORST ; KRUMBE WOLFGANG</creator><creatorcontrib>HABLER CHRISTIAN ; WEBER KLAUS ; WODITSCH PETER ; LANGE HORST ; KRUMBE WOLFGANG</creatorcontrib><description>L'invention concerne un silicium multicristallin à solidification dirigée contenant de l'arsenic et/ ou de l'antimoine, un procédé pour sa production et son utilisation, ainsi que des cellules solaires contenant ce silicium et un procédé pour leur production.
The present invention relates to directionally solidified, arsenic- and/or antimony-containing, multicrystalline silicon, a process for the production thereof and its use, and to solar cells containing this silicon and a process for the production thereof.</description><edition>6</edition><language>fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981030&DB=EPODOC&CC=FR&NR=2762620A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981030&DB=EPODOC&CC=FR&NR=2762620A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HABLER CHRISTIAN</creatorcontrib><creatorcontrib>WEBER KLAUS</creatorcontrib><creatorcontrib>WODITSCH PETER</creatorcontrib><creatorcontrib>LANGE HORST</creatorcontrib><creatorcontrib>KRUMBE WOLFGANG</creatorcontrib><title>SILICIUM MULTICRISTALLIN A SOLIDIFICATION DIRIGEE, SON PROCEDE DE FABRICATION ET SON UTILISATION, ET CELLULES SOLAIRES CONTENANT CE SILICIUM ET LEUR PROCEDE DE FABRICATION</title><description>L'invention concerne un silicium multicristallin à solidification dirigée contenant de l'arsenic et/ ou de l'antimoine, un procédé pour sa production et son utilisation, ainsi que des cellules solaires contenant ce silicium et un procédé pour leur production.
The present invention relates to directionally solidified, arsenic- and/or antimony-containing, multicrystalline silicon, a process for the production thereof and its use, and to solar cells containing this silicon and a process for the production thereof.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjk0KwkAMRrtxIeodcoAKWqGup9OMBtIZmZ91KTKuRAv1Vl7SaVF3ghBI-L7HI_Ps6YhJUmigCexJWnJeMJMGAc4w1aRICk9GQ02WDoh5yjWcrJFYI6RRorIfBv3UBp-sboryMZPIHBjdqBRk0yGN9qiFHjv4_pBQxmB_2JfZ7NJdh7h670UGCr08rmN_b-PQd-d4i49W2WJfFmWxEdvdH8gL56tHUg</recordid><startdate>19981030</startdate><enddate>19981030</enddate><creator>HABLER CHRISTIAN</creator><creator>WEBER KLAUS</creator><creator>WODITSCH PETER</creator><creator>LANGE HORST</creator><creator>KRUMBE WOLFGANG</creator><scope>EVB</scope></search><sort><creationdate>19981030</creationdate><title>SILICIUM MULTICRISTALLIN A SOLIDIFICATION DIRIGEE, SON PROCEDE DE FABRICATION ET SON UTILISATION, ET CELLULES SOLAIRES CONTENANT CE SILICIUM ET LEUR PROCEDE DE FABRICATION</title><author>HABLER CHRISTIAN ; WEBER KLAUS ; WODITSCH PETER ; LANGE HORST ; KRUMBE WOLFGANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_FR2762620A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>fre</language><creationdate>1998</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>HABLER CHRISTIAN</creatorcontrib><creatorcontrib>WEBER KLAUS</creatorcontrib><creatorcontrib>WODITSCH PETER</creatorcontrib><creatorcontrib>LANGE HORST</creatorcontrib><creatorcontrib>KRUMBE WOLFGANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HABLER CHRISTIAN</au><au>WEBER KLAUS</au><au>WODITSCH PETER</au><au>LANGE HORST</au><au>KRUMBE WOLFGANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILICIUM MULTICRISTALLIN A SOLIDIFICATION DIRIGEE, SON PROCEDE DE FABRICATION ET SON UTILISATION, ET CELLULES SOLAIRES CONTENANT CE SILICIUM ET LEUR PROCEDE DE FABRICATION</title><date>1998-10-30</date><risdate>1998</risdate><abstract>L'invention concerne un silicium multicristallin à solidification dirigée contenant de l'arsenic et/ ou de l'antimoine, un procédé pour sa production et son utilisation, ainsi que des cellules solaires contenant ce silicium et un procédé pour leur production.
The present invention relates to directionally solidified, arsenic- and/or antimony-containing, multicrystalline silicon, a process for the production thereof and its use, and to solar cells containing this silicon and a process for the production thereof.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | fre |
| recordid | cdi_epo_espacenet_FR2762620A1 |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SILICIUM MULTICRISTALLIN A SOLIDIFICATION DIRIGEE, SON PROCEDE DE FABRICATION ET SON UTILISATION, ET CELLULES SOLAIRES CONTENANT CE SILICIUM ET LEUR PROCEDE DE FABRICATION |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T00%3A57%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HABLER%20CHRISTIAN&rft.date=1998-10-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EFR2762620A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |