TRANSISTOR A EFFET DE CHAMP A SUPRACONDUCTEUR

Field effect transistor comprising, on a substrate (1), a layer (2) of semiconductor material incorporating natural or artificial inclusions (20, 21) made of superconducting material. The source, drain and grid electrodes (3, 4, 5) are produced on this layer (2). Applications: field-effect transisto...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TYC STEPHANE, SCHUHL ALAIN
Format:	Patent
Sprache:	fre
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	TYC STEPHANE SCHUHL ALAIN
description	Field effect transistor comprising, on a substrate (1), a layer (2) of semiconductor material incorporating natural or artificial inclusions (20, 21) made of superconducting material. The source, drain and grid electrodes (3, 4, 5) are produced on this layer (2). Applications: field-effect transistors with low grid-control voltage.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_FR2666175B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>FR2666175B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_FR2666175B13</originalsourceid><addsrcrecordid>eNrjZNANCXL0C_YMDvEPUnBUcHVzcw1RcHFVcPZw9A0ACgSHBgQ5Ovv7uYQ6h7iGBvEwsKYl5hSn8kJpbgYFoAZnD93Ugvz41OKCxOTUvNSSeLcgIzMzM0NzUydDYyKUAABoIiUE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TRANSISTOR A EFFET DE CHAMP A SUPRACONDUCTEUR</title><source>esp@cenet</source><creator>TYC STEPHANE ; SCHUHL ALAIN</creator><creatorcontrib>TYC STEPHANE ; SCHUHL ALAIN</creatorcontrib><description>Field effect transistor comprising, on a substrate (1), a layer (2) of semiconductor material incorporating natural or artificial inclusions (20, 21) made of superconducting material. The source, drain and grid electrodes (3, 4, 5) are produced on this layer (2). Applications: field-effect transistors with low grid-control voltage.</description><edition>5</edition><language>fre</language><subject>ELECTRICITY</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19921016&DB=EPODOC&CC=FR&NR=2666175B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19921016&DB=EPODOC&CC=FR&NR=2666175B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TYC STEPHANE</creatorcontrib><creatorcontrib>SCHUHL ALAIN</creatorcontrib><title>TRANSISTOR A EFFET DE CHAMP A SUPRACONDUCTEUR</title><description>Field effect transistor comprising, on a substrate (1), a layer (2) of semiconductor material incorporating natural or artificial inclusions (20, 21) made of superconducting material. The source, drain and grid electrodes (3, 4, 5) are produced on this layer (2). Applications: field-effect transistors with low grid-control voltage.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNANCXL0C_YMDvEPUnBUcHVzcw1RcHFVcPZw9A0ACgSHBgQ5Ovv7uYQ6h7iGBvEwsKYl5hSn8kJpbgYFoAZnD93Ugvz41OKCxOTUvNSSeLcgIzMzM0NzUydDYyKUAABoIiUE</recordid><startdate>19921016</startdate><enddate>19921016</enddate><creator>TYC STEPHANE</creator><creator>SCHUHL ALAIN</creator><scope>EVB</scope></search><sort><creationdate>19921016</creationdate><title>TRANSISTOR A EFFET DE CHAMP A SUPRACONDUCTEUR</title><author>TYC STEPHANE ; SCHUHL ALAIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_FR2666175B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>fre</language><creationdate>1992</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>TYC STEPHANE</creatorcontrib><creatorcontrib>SCHUHL ALAIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TYC STEPHANE</au><au>SCHUHL ALAIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TRANSISTOR A EFFET DE CHAMP A SUPRACONDUCTEUR</title><date>1992-10-16</date><risdate>1992</risdate><abstract>Field effect transistor comprising, on a substrate (1), a layer (2) of semiconductor material incorporating natural or artificial inclusions (20, 21) made of superconducting material. The source, drain and grid electrodes (3, 4, 5) are produced on this layer (2). Applications: field-effect transistors with low grid-control voltage.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	fre
recordid	cdi_epo_espacenet_FR2666175B1
source	esp@cenet
subjects	ELECTRICITY
title	TRANSISTOR A EFFET DE CHAMP A SUPRACONDUCTEUR
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T14%3A29%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TYC%20STEPHANE&rft.date=1992-10-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EFR2666175B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true