TRANSISTOR A EFFET DE CHAMP A SUPRACONDUCTEUR

Field effect transistor comprising, on a substrate (1), a layer (2) of semiconductor material incorporating natural or artificial inclusions (20, 21) made of superconducting material. The source, drain and grid electrodes (3, 4, 5) are produced on this layer (2). Applications: field-effect transisto...

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Hauptverfasser: TYC STEPHANE, SCHUHL ALAIN
Format: Patent
Sprache:fre
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Beschreibung
Zusammenfassung:Field effect transistor comprising, on a substrate (1), a layer (2) of semiconductor material incorporating natural or artificial inclusions (20, 21) made of superconducting material. The source, drain and grid electrodes (3, 4, 5) are produced on this layer (2). Applications: field-effect transistors with low grid-control voltage.