CREUSETS PERFECTIONNES POUR LE TIRAGE D'UNE BANDE DENDRITIQUE DE SILICIUM
This invention delineates a multiple barrier design for separating the feed compartment (12) from the growth compartment (13) in crucibles (10) used for silicon dendritic web growth. The use of the barrier design greatly reduces the thermal interaction between the two compartments permitting larger...
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| creator | RAYMOND GEORGE SEIDENSTICKER CHARLES STUART DUNCAN EDGAR LEONARD KOCHKA |
| description | This invention delineates a multiple barrier design for separating the feed compartment (12) from the growth compartment (13) in crucibles (10) used for silicon dendritic web growth. The use of the barrier design greatly reduces the thermal interaction between the two compartments permitting larger replenishment rates without adverse effect on crystal growth. Its novelty lies in having a primary and secondary barrier (15,16) spaced apart from one another such that there exists a space (22) between the barriers (15,16) which is devoid of liquid silicon thus reducing the thermal conductance of the combination. |
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The use of the barrier design greatly reduces the thermal interaction between the two compartments permitting larger replenishment rates without adverse effect on crystal growth. 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The use of the barrier design greatly reduces the thermal interaction between the two compartments permitting larger replenishment rates without adverse effect on crystal growth. Its novelty lies in having a primary and secondary barrier (15,16) spaced apart from one another such that there exists a space (22) between the barriers (15,16) which is devoid of liquid silicon thus reducing the thermal conductance of the combination.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | CREUSETS PERFECTIONNES POUR LE TIRAGE D'UNE BANDE DENDRITIQUE DE SILICIUM |
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