FR2620269
In this process for etching a flat dendritic silicon crystal in order to use it as a photovoltaic cell, a predetermined configuration of etching-resistant material is applied to a surface 111 of the silicon crystal, the configuration covering substantially the entire surface 111, and the surface 111...
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| creator | LEONARD EARL HOHN JEONG-MO HWANG JAMES BERNARD MCNALLY DANIEL LEO MEIER |
| description | In this process for etching a flat dendritic silicon crystal in order to use it as a photovoltaic cell, a predetermined configuration of etching-resistant material is applied to a surface 111 of the silicon crystal, the configuration covering substantially the entire surface 111, and the surface 111 is etched by means of an isotropic etching material until the etching material reveals, by undermining, the configuration of the etching-resistant material substantially completely, thereby forming a set of spikes with sloping sides on the silicon crystal, the isotropic etching material and the configuration cooperating in such a way that the sloping sides have a slope which traps substantially in the interior of the silicon crystal all the light striking the silicon crystal. |
| format | Patent |
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CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>1994</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940819&DB=EPODOC&CC=FR&NR=2620269B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940819&DB=EPODOC&CC=FR&NR=2620269B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEONARD EARL HOHN</creatorcontrib><creatorcontrib>JEONG-MO HWANG</creatorcontrib><creatorcontrib>JAMES BERNARD MCNALLY</creatorcontrib><creatorcontrib>DANIEL LEO MEIER</creatorcontrib><title>FR2620269</title><description>In this process for etching a flat dendritic silicon crystal in order to use it as a photovoltaic cell, a predetermined configuration of etching-resistant material is applied to a surface 111 of the silicon crystal, the configuration covering substantially the entire surface 111, and the surface 111 is etched by means of an isotropic etching material until the etching material reveals, by undermining, the configuration of the etching-resistant material substantially completely, thereby forming a set of spikes with sloping sides on the silicon crystal, the isotropic etching material and the configuration cooperating in such a way that the sloping sides have a slope which traps substantially in the interior of the silicon crystal all the light striking the silicon crystal.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1994</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOB0CzIyMzIwMrPkYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxcPVOhsZEKAEA1PgamQ</recordid><startdate>19940819</startdate><enddate>19940819</enddate><creator>LEONARD EARL HOHN</creator><creator>JEONG-MO HWANG</creator><creator>JAMES BERNARD MCNALLY</creator><creator>DANIEL LEO MEIER</creator><scope>EVB</scope></search><sort><creationdate>19940819</creationdate><title>FR2620269</title><author>LEONARD EARL HOHN ; JEONG-MO HWANG ; JAMES BERNARD MCNALLY ; DANIEL LEO MEIER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_FR2620269B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1994</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEONARD EARL HOHN</creatorcontrib><creatorcontrib>JEONG-MO HWANG</creatorcontrib><creatorcontrib>JAMES BERNARD MCNALLY</creatorcontrib><creatorcontrib>DANIEL LEO MEIER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEONARD EARL HOHN</au><au>JEONG-MO HWANG</au><au>JAMES BERNARD MCNALLY</au><au>DANIEL LEO MEIER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FR2620269</title><date>1994-08-19</date><risdate>1994</risdate><abstract>In this process for etching a flat dendritic silicon crystal in order to use it as a photovoltaic cell, a predetermined configuration of etching-resistant material is applied to a surface 111 of the silicon crystal, the configuration covering substantially the entire surface 111, and the surface 111 is etched by means of an isotropic etching material until the etching material reveals, by undermining, the configuration of the etching-resistant material substantially completely, thereby forming a set of spikes with sloping sides on the silicon crystal, the isotropic etching material and the configuration cooperating in such a way that the sloping sides have a slope which traps substantially in the interior of the silicon crystal all the light striking the silicon crystal.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | FR2620269 |
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