Reaction chamber, atomic layer deposition apparatus and method
The invention relates to a reaction chamber (10), apparatus and method for atomic layer deposition. The reaction chamber (10) comprises a gas inlet (92), a gas outlet (102) arranged spaced apart from the gas inlet (92), and two or more substrate racks (B1, B2). Each of the substrate racks (b1, B2) i...
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| creator | Bosund, Markus Suhonen, Olli-Pekka Soininen, Pekka Malila, Matti |
| description | The invention relates to a reaction chamber (10), apparatus and method for atomic layer deposition. The reaction chamber (10) comprises a gas inlet (92), a gas outlet (102) arranged spaced apart from the gas inlet (92), and two or more substrate racks (B1, B2). Each of the substrate racks (b1, B2) is arranged to support two or more separate substrates (2) such that a substrate batch is formed. The two or more substrate racks (B1, B2) are arranged inside the reaction space (8) of the reaction chamber (10) between the gas inlet (92) and the gas outlet (102), and the two or more substrate racks (B1, B2) are arranged in a row assembly between the gas inlet (92) and the gas outlet (102).
Keksintö liittyy reaktiokammioon (10), laitteeseen ja menetelmään atomikerrospinnoitusta varten. Reaktiokammio (10) käsittää kaasun sisääntulon (92), kaasun ulostulon (102), joka on järjestetty erilleen kaasun sisääntulosta (92), ja kaksi tai useampia substraattitelineitä (B1, B2). Kukin substraattiteline (BI, B2) on järjestetty tukemaan kahta tai useampaa erillistä substraattia (2) siten, että muodostuu substraattierä. Kaksi tai useampia substraattitelineitä (B1, B2) on sijoitettu reaktiokammion (10) reaktiotilaan (8) kaasun sisääntulon (92) ja kaasun ulostulon - (102) - väliin, ja kaksi tai useampia substraattitelineitä ( B1, B2) on järjestetty rivikokoonpanoon kaasun sisääntulon (92) ja kaasun ulostulon (102) väliin. |
| format | Patent |
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Keksintö liittyy reaktiokammioon (10), laitteeseen ja menetelmään atomikerrospinnoitusta varten. Reaktiokammio (10) käsittää kaasun sisääntulon (92), kaasun ulostulon (102), joka on järjestetty erilleen kaasun sisääntulosta (92), ja kaksi tai useampia substraattitelineitä (B1, B2). Kukin substraattiteline (BI, B2) on järjestetty tukemaan kahta tai useampaa erillistä substraattia (2) siten, että muodostuu substraattierä. Kaksi tai useampia substraattitelineitä (B1, B2) on sijoitettu reaktiokammion (10) reaktiotilaan (8) kaasun sisääntulon (92) ja kaasun ulostulon - (102) - väliin, ja kaksi tai useampia substraattitelineitä ( B1, B2) on järjestetty rivikokoonpanoon kaasun sisääntulon (92) ja kaasun ulostulon (102) väliin.</description><language>eng ; fin ; swe</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231001&DB=EPODOC&CC=FI&NR=20225272A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231001&DB=EPODOC&CC=FI&NR=20225272A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Bosund, Markus</creatorcontrib><creatorcontrib>Suhonen, Olli-Pekka</creatorcontrib><creatorcontrib>Soininen, Pekka</creatorcontrib><creatorcontrib>Malila, Matti</creatorcontrib><title>Reaction chamber, atomic layer deposition apparatus and method</title><description>The invention relates to a reaction chamber (10), apparatus and method for atomic layer deposition. The reaction chamber (10) comprises a gas inlet (92), a gas outlet (102) arranged spaced apart from the gas inlet (92), and two or more substrate racks (B1, B2). Each of the substrate racks (b1, B2) is arranged to support two or more separate substrates (2) such that a substrate batch is formed. The two or more substrate racks (B1, B2) are arranged inside the reaction space (8) of the reaction chamber (10) between the gas inlet (92) and the gas outlet (102), and the two or more substrate racks (B1, B2) are arranged in a row assembly between the gas inlet (92) and the gas outlet (102).
Keksintö liittyy reaktiokammioon (10), laitteeseen ja menetelmään atomikerrospinnoitusta varten. Reaktiokammio (10) käsittää kaasun sisääntulon (92), kaasun ulostulon (102), joka on järjestetty erilleen kaasun sisääntulosta (92), ja kaksi tai useampia substraattitelineitä (B1, B2). Kukin substraattiteline (BI, B2) on järjestetty tukemaan kahta tai useampaa erillistä substraattia (2) siten, että muodostuu substraattierä. Kaksi tai useampia substraattitelineitä (B1, B2) on sijoitettu reaktiokammion (10) reaktiotilaan (8) kaasun sisääntulon (92) ja kaasun ulostulon - (102) - väliin, ja kaksi tai useampia substraattitelineitä ( B1, B2) on järjestetty rivikokoonpanoon kaasun sisääntulon (92) ja kaasun ulostulon (102) väliin.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALSk1MLsnMz1NIzkjMTUot0lFILMnPzUxWyEmsTC1SSEktyC_OBCtILChILEosKS1WSMxLUchNLcnIT-FhYE1LzClO5YXS3AyKbq4hzh66QG3xqcUFicmpeakl8W6eRgZGRqZG5kaOhsbEqAEAVjMwfw</recordid><startdate>20231001</startdate><enddate>20231001</enddate><creator>Bosund, Markus</creator><creator>Suhonen, Olli-Pekka</creator><creator>Soininen, Pekka</creator><creator>Malila, Matti</creator><scope>EVB</scope></search><sort><creationdate>20231001</creationdate><title>Reaction chamber, atomic layer deposition apparatus and method</title><author>Bosund, Markus ; Suhonen, Olli-Pekka ; Soininen, Pekka ; Malila, Matti</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_FI20225272A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fin ; swe</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Bosund, Markus</creatorcontrib><creatorcontrib>Suhonen, Olli-Pekka</creatorcontrib><creatorcontrib>Soininen, Pekka</creatorcontrib><creatorcontrib>Malila, Matti</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bosund, Markus</au><au>Suhonen, Olli-Pekka</au><au>Soininen, Pekka</au><au>Malila, Matti</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reaction chamber, atomic layer deposition apparatus and method</title><date>2023-10-01</date><risdate>2023</risdate><abstract>The invention relates to a reaction chamber (10), apparatus and method for atomic layer deposition. The reaction chamber (10) comprises a gas inlet (92), a gas outlet (102) arranged spaced apart from the gas inlet (92), and two or more substrate racks (B1, B2). Each of the substrate racks (b1, B2) is arranged to support two or more separate substrates (2) such that a substrate batch is formed. The two or more substrate racks (B1, B2) are arranged inside the reaction space (8) of the reaction chamber (10) between the gas inlet (92) and the gas outlet (102), and the two or more substrate racks (B1, B2) are arranged in a row assembly between the gas inlet (92) and the gas outlet (102).
Keksintö liittyy reaktiokammioon (10), laitteeseen ja menetelmään atomikerrospinnoitusta varten. Reaktiokammio (10) käsittää kaasun sisääntulon (92), kaasun ulostulon (102), joka on järjestetty erilleen kaasun sisääntulosta (92), ja kaksi tai useampia substraattitelineitä (B1, B2). Kukin substraattiteline (BI, B2) on järjestetty tukemaan kahta tai useampaa erillistä substraattia (2) siten, että muodostuu substraattierä. Kaksi tai useampia substraattitelineitä (B1, B2) on sijoitettu reaktiokammion (10) reaktiotilaan (8) kaasun sisääntulon (92) ja kaasun ulostulon - (102) - väliin, ja kaksi tai useampia substraattitelineitä ( B1, B2) on järjestetty rivikokoonpanoon kaasun sisääntulon (92) ja kaasun ulostulon (102) väliin.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Reaction chamber, atomic layer deposition apparatus and method |
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