PROCEDIMIENTO PARA PREPARAR CAPAS DE OXIDO DE COBRE (I) SOBRE UN SUSTRATO DE OXIDO METALICO
Process for preparing copper oxide (I) layers on a metal oxide substrate. The present invention relates to a process for preparing layers of copper (I) oxide on a metal oxide substrate, in which organic solutions of a copper (II) salt are used as a precursor, and a treatment is carried out thermal i...
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| creator | Tamayo Buisan, Ruben Calleja Lazaro, Alberto |
| description | Process for preparing copper oxide (I) layers on a metal oxide substrate. The present invention relates to a process for preparing layers of copper (I) oxide on a metal oxide substrate, in which organic solutions of a copper (II) salt are used as a precursor, and a treatment is carried out thermal in the presence of an inert gas and oxygen. It also refers to the architectures obtainable by said procedure, and the use thereof in photovoltaic applications. (Machine-translation by Google Translate, not legally binding) |
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The present invention relates to a process for preparing layers of copper (I) oxide on a metal oxide substrate, in which organic solutions of a copper (II) salt are used as a precursor, and a treatment is carried out thermal in the presence of an inert gas and oxygen. It also refers to the architectures obtainable by said procedure, and the use thereof in photovoltaic applications. 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The present invention relates to a process for preparing layers of copper (I) oxide on a metal oxide substrate, in which organic solutions of a copper (II) salt are used as a precursor, and a treatment is carried out thermal in the presence of an inert gas and oxygen. It also refers to the architectures obtainable by said procedure, and the use thereof in photovoltaic applications. 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The present invention relates to a process for preparing layers of copper (I) oxide on a metal oxide substrate, in which organic solutions of a copper (II) salt are used as a precursor, and a treatment is carried out thermal in the presence of an inert gas and oxygen. It also refers to the architectures obtainable by said procedure, and the use thereof in photovoltaic applications. (Machine-translation by Google Translate, not legally binding)</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PROCEDIMIENTO PARA PREPARAR CAPAS DE OXIDO DE COBRE (I) SOBRE UN SUSTRATO DE OXIDO METALICO |
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