INSTALACION DE PURIFICACION DE UN MATERIAL SEMICONDUCTOR CON ANTORCHA DE PLASMA
Instalación (10) de purificación de un material semiconductor (44) que comprende al menos un recinto que contiene una atmósfera de al menos un gas neutro, y que comprende, en el recinto: un crisol (30) destinado a contener el material semiconductor en estado fundido; una antorcha de plasma (40) dest...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | spa |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | COCCO, FRANCOIS RIVAT, PASCAL GROSSIER, ETIENNE FLAHAUT, EMMANUEL TRASSY, CHRISTIAN |
| description | Instalación (10) de purificación de un material semiconductor (44) que comprende al menos un recinto que contiene una atmósfera de al menos un gas neutro, y que comprende, en el recinto: un crisol (30) destinado a contener el material semiconductor en estado fundido; una antorcha de plasma (40) destinada a eliminar impurezas del material semiconductor fundido en el crisol; y un sistema de confinamiento (50) destinado a delimitar un volumen de confinamiento (69) entre el crisol y la antorcha de plasma, comprendiendo el sistema de confinamiento un sistema de evacuación (54) de compuestos gaseosos y/o de partículas procedentes de la purificación del silicio fundido, caracterizada porque el sistema de evacuación comprende al menos una abertura de aspiración (70) que presenta una porción cilíndrica (72) que se prolonga mediante una porción ensanchada (76) que desemboca en el volumen de confinamiento.
The invention relates to an apparatus (10) for purifying a semiconductor material (44), which includes at least a chamber containing an atmosphere of at least one inert gas. The apparatus comprises: in the chamber, a crucible (30) intended to contain the semiconductor material in the molten state; a plasma torch (40) intended to remove impurities from the molten semiconductor material in the crucible; and a confinement system (50) intended to define a confinement volume (69) between the crucible and the plasma torch, the confinement system comprising a device (54) for evacuating gaseous compounds and/or particles resulting from the purification of the molten silicon. The evacuation device comprises at least one suction aperture (70) having a cylindrical portion (72) extended by a flared portion (76) opening into the confinement volume. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_ES2370135TT3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ES2370135TT3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_ES2370135TT33</originalsourceid><addsrcrecordid>eNrjZPD39AsOcfRxdPb091NwcVUICA3ydPN0hvND_RR8HUNcgzwdfRSCXX09nf39XEKdQ_yDFIAsBUc_IMvZwxGs08cx2NeRh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEuwYbGZsbGBqbhoQYGxOjBgAxpC7t</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INSTALACION DE PURIFICACION DE UN MATERIAL SEMICONDUCTOR CON ANTORCHA DE PLASMA</title><source>esp@cenet</source><creator>COCCO, FRANCOIS ; RIVAT, PASCAL ; GROSSIER, ETIENNE ; FLAHAUT, EMMANUEL ; TRASSY, CHRISTIAN</creator><creatorcontrib>COCCO, FRANCOIS ; RIVAT, PASCAL ; GROSSIER, ETIENNE ; FLAHAUT, EMMANUEL ; TRASSY, CHRISTIAN</creatorcontrib><description>Instalación (10) de purificación de un material semiconductor (44) que comprende al menos un recinto que contiene una atmósfera de al menos un gas neutro, y que comprende, en el recinto: un crisol (30) destinado a contener el material semiconductor en estado fundido; una antorcha de plasma (40) destinada a eliminar impurezas del material semiconductor fundido en el crisol; y un sistema de confinamiento (50) destinado a delimitar un volumen de confinamiento (69) entre el crisol y la antorcha de plasma, comprendiendo el sistema de confinamiento un sistema de evacuación (54) de compuestos gaseosos y/o de partículas procedentes de la purificación del silicio fundido, caracterizada porque el sistema de evacuación comprende al menos una abertura de aspiración (70) que presenta una porción cilíndrica (72) que se prolonga mediante una porción ensanchada (76) que desemboca en el volumen de confinamiento.
The invention relates to an apparatus (10) for purifying a semiconductor material (44), which includes at least a chamber containing an atmosphere of at least one inert gas. The apparatus comprises: in the chamber, a crucible (30) intended to contain the semiconductor material in the molten state; a plasma torch (40) intended to remove impurities from the molten semiconductor material in the crucible; and a confinement system (50) intended to define a confinement volume (69) between the crucible and the plasma torch, the confinement system comprising a device (54) for evacuating gaseous compounds and/or particles resulting from the purification of the molten silicon. The evacuation device comprises at least one suction aperture (70) having a cylindrical portion (72) extended by a flared portion (76) opening into the confinement volume.</description><language>spa</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111213&DB=EPODOC&CC=ES&NR=2370135T3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111213&DB=EPODOC&CC=ES&NR=2370135T3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>COCCO, FRANCOIS</creatorcontrib><creatorcontrib>RIVAT, PASCAL</creatorcontrib><creatorcontrib>GROSSIER, ETIENNE</creatorcontrib><creatorcontrib>FLAHAUT, EMMANUEL</creatorcontrib><creatorcontrib>TRASSY, CHRISTIAN</creatorcontrib><title>INSTALACION DE PURIFICACION DE UN MATERIAL SEMICONDUCTOR CON ANTORCHA DE PLASMA</title><description>Instalación (10) de purificación de un material semiconductor (44) que comprende al menos un recinto que contiene una atmósfera de al menos un gas neutro, y que comprende, en el recinto: un crisol (30) destinado a contener el material semiconductor en estado fundido; una antorcha de plasma (40) destinada a eliminar impurezas del material semiconductor fundido en el crisol; y un sistema de confinamiento (50) destinado a delimitar un volumen de confinamiento (69) entre el crisol y la antorcha de plasma, comprendiendo el sistema de confinamiento un sistema de evacuación (54) de compuestos gaseosos y/o de partículas procedentes de la purificación del silicio fundido, caracterizada porque el sistema de evacuación comprende al menos una abertura de aspiración (70) que presenta una porción cilíndrica (72) que se prolonga mediante una porción ensanchada (76) que desemboca en el volumen de confinamiento.
The invention relates to an apparatus (10) for purifying a semiconductor material (44), which includes at least a chamber containing an atmosphere of at least one inert gas. The apparatus comprises: in the chamber, a crucible (30) intended to contain the semiconductor material in the molten state; a plasma torch (40) intended to remove impurities from the molten semiconductor material in the crucible; and a confinement system (50) intended to define a confinement volume (69) between the crucible and the plasma torch, the confinement system comprising a device (54) for evacuating gaseous compounds and/or particles resulting from the purification of the molten silicon. The evacuation device comprises at least one suction aperture (70) having a cylindrical portion (72) extended by a flared portion (76) opening into the confinement volume.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD39AsOcfRxdPb091NwcVUICA3ydPN0hvND_RR8HUNcgzwdfRSCXX09nf39XEKdQ_yDFIAsBUc_IMvZwxGs08cx2NeRh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEuwYbGZsbGBqbhoQYGxOjBgAxpC7t</recordid><startdate>20111213</startdate><enddate>20111213</enddate><creator>COCCO, FRANCOIS</creator><creator>RIVAT, PASCAL</creator><creator>GROSSIER, ETIENNE</creator><creator>FLAHAUT, EMMANUEL</creator><creator>TRASSY, CHRISTIAN</creator><scope>EVB</scope></search><sort><creationdate>20111213</creationdate><title>INSTALACION DE PURIFICACION DE UN MATERIAL SEMICONDUCTOR CON ANTORCHA DE PLASMA</title><author>COCCO, FRANCOIS ; RIVAT, PASCAL ; GROSSIER, ETIENNE ; FLAHAUT, EMMANUEL ; TRASSY, CHRISTIAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_ES2370135TT33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>spa</language><creationdate>2011</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>COCCO, FRANCOIS</creatorcontrib><creatorcontrib>RIVAT, PASCAL</creatorcontrib><creatorcontrib>GROSSIER, ETIENNE</creatorcontrib><creatorcontrib>FLAHAUT, EMMANUEL</creatorcontrib><creatorcontrib>TRASSY, CHRISTIAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>COCCO, FRANCOIS</au><au>RIVAT, PASCAL</au><au>GROSSIER, ETIENNE</au><au>FLAHAUT, EMMANUEL</au><au>TRASSY, CHRISTIAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INSTALACION DE PURIFICACION DE UN MATERIAL SEMICONDUCTOR CON ANTORCHA DE PLASMA</title><date>2011-12-13</date><risdate>2011</risdate><abstract>Instalación (10) de purificación de un material semiconductor (44) que comprende al menos un recinto que contiene una atmósfera de al menos un gas neutro, y que comprende, en el recinto: un crisol (30) destinado a contener el material semiconductor en estado fundido; una antorcha de plasma (40) destinada a eliminar impurezas del material semiconductor fundido en el crisol; y un sistema de confinamiento (50) destinado a delimitar un volumen de confinamiento (69) entre el crisol y la antorcha de plasma, comprendiendo el sistema de confinamiento un sistema de evacuación (54) de compuestos gaseosos y/o de partículas procedentes de la purificación del silicio fundido, caracterizada porque el sistema de evacuación comprende al menos una abertura de aspiración (70) que presenta una porción cilíndrica (72) que se prolonga mediante una porción ensanchada (76) que desemboca en el volumen de confinamiento.
The invention relates to an apparatus (10) for purifying a semiconductor material (44), which includes at least a chamber containing an atmosphere of at least one inert gas. The apparatus comprises: in the chamber, a crucible (30) intended to contain the semiconductor material in the molten state; a plasma torch (40) intended to remove impurities from the molten semiconductor material in the crucible; and a confinement system (50) intended to define a confinement volume (69) between the crucible and the plasma torch, the confinement system comprising a device (54) for evacuating gaseous compounds and/or particles resulting from the purification of the molten silicon. The evacuation device comprises at least one suction aperture (70) having a cylindrical portion (72) extended by a flared portion (76) opening into the confinement volume.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | spa |
| recordid | cdi_epo_espacenet_ES2370135TT3 |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | INSTALACION DE PURIFICACION DE UN MATERIAL SEMICONDUCTOR CON ANTORCHA DE PLASMA |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T22%3A02%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=COCCO,%20FRANCOIS&rft.date=2011-12-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EES2370135TT3%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |