GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR

The group III-V compound semiconductor single crystal substrate has a circular main surface, wherein the main surface has an orientation flat or a notch and has a first region that is inside a first virtual line passing through a point 5 mm away inward from an outer periphery thereof, and a first re...

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Bibliographische Detailangaben

Hauptverfasser:	UEMATSU, Koji, NAKANISHI, Fumitake, NODA, Kazuki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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