SOLID MATERIAL REMAINING AMOUNT MEASUREMENT METHOD, SUBLIMATED GAS SUPPLY METHOD, AND SUBLIMATED GAS SUPPLY SYSTEM
[Problem] To provide a measuring method capable of suppressing loss of a residual quantity of a solid material inside a solid material vessel when a sublimation gas of the solid material is supplied to a subsequent process.[Solution] The method comprises, when a buffer tank is refilled with a sublim...
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creator | GOTO, Mikio NAKAGAWA, Toshiyuki IDA, Kentaro |
description | [Problem] To provide a measuring method capable of suppressing loss of a residual quantity of a solid material inside a solid material vessel when a sublimation gas of the solid material is supplied to a subsequent process.[Solution] The method comprises, when a buffer tank is refilled with a sublimation gas: a first residual quantity calculation step in which a residual quantity of the solid material is calculated from a consumption amount of the sublimation gas fed from the buffer tank to the subsequent process; a second residual quantity calculation step in which the residual quantity of the solid material is calculated from a mass amount of the sublimation gas fed from a solid material vessel to the buffer tank; and/or a switching determination step in which a switching timing and an abnormality are determined from the residual quantity of the solid material inside the solid material vessel. |
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a second residual quantity calculation step in which the residual quantity of the solid material is calculated from a mass amount of the sublimation gas fed from a solid material vessel to the buffer tank; and/or a switching determination step in which a switching timing and an abnormality are determined from the residual quantity of the solid material inside the solid material vessel.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; THEIR RELEVANT APPARATUS ; TRANSPORTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241127&DB=EPODOC&CC=EP&NR=4467683A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25553,76306</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241127&DB=EPODOC&CC=EP&NR=4467683A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GOTO, Mikio</creatorcontrib><creatorcontrib>NAKAGAWA, Toshiyuki</creatorcontrib><creatorcontrib>IDA, Kentaro</creatorcontrib><title>SOLID MATERIAL REMAINING AMOUNT MEASUREMENT METHOD, SUBLIMATED GAS SUPPLY METHOD, AND SUBLIMATED GAS SUPPLY SYSTEM</title><description>[Problem] To provide a measuring method capable of suppressing loss of a residual quantity of a solid material inside a solid material vessel when a sublimation gas of the solid material is supplied to a subsequent process.[Solution] The method comprises, when a buffer tank is refilled with a sublimation gas: a first residual quantity calculation step in which a residual quantity of the solid material is calculated from a consumption amount of the sublimation gas fed from the buffer tank to the subsequent process; a second residual quantity calculation step in which the residual quantity of the solid material is calculated from a mass amount of the sublimation gas fed from a solid material vessel to the buffer tank; and/or a switching determination step in which a switching timing and an abnormality are determined from the residual quantity of the solid material inside the solid material vessel.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>THEIR RELEVANT APPARATUS</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZCgK9vfxdFHwdQxxDfJ09FEIcvV19PTz9HNXcPT1D_ULUfB1dQwOBYq6gtkhHv4uOgrBoU4-niAtLgrujsFAbkCATyRc1tHPBYeK4MjgEFdfHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWlyQmJyal1oS7xpgYmJmbmZh7GhoTIQSAPTnOEE</recordid><startdate>20241127</startdate><enddate>20241127</enddate><creator>GOTO, Mikio</creator><creator>NAKAGAWA, Toshiyuki</creator><creator>IDA, Kentaro</creator><scope>EVB</scope></search><sort><creationdate>20241127</creationdate><title>SOLID MATERIAL REMAINING AMOUNT MEASUREMENT METHOD, SUBLIMATED GAS SUPPLY METHOD, AND SUBLIMATED GAS SUPPLY SYSTEM</title><author>GOTO, Mikio ; NAKAGAWA, Toshiyuki ; IDA, Kentaro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4467683A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>THEIR RELEVANT APPARATUS</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>GOTO, Mikio</creatorcontrib><creatorcontrib>NAKAGAWA, Toshiyuki</creatorcontrib><creatorcontrib>IDA, Kentaro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GOTO, Mikio</au><au>NAKAGAWA, Toshiyuki</au><au>IDA, Kentaro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SOLID MATERIAL REMAINING AMOUNT MEASUREMENT METHOD, SUBLIMATED GAS SUPPLY METHOD, AND SUBLIMATED GAS SUPPLY SYSTEM</title><date>2024-11-27</date><risdate>2024</risdate><abstract>[Problem] To provide a measuring method capable of suppressing loss of a residual quantity of a solid material inside a solid material vessel when a sublimation gas of the solid material is supplied to a subsequent process.[Solution] The method comprises, when a buffer tank is refilled with a sublimation gas: a first residual quantity calculation step in which a residual quantity of the solid material is calculated from a consumption amount of the sublimation gas fed from the buffer tank to the subsequent process; a second residual quantity calculation step in which the residual quantity of the solid material is calculated from a mass amount of the sublimation gas fed from a solid material vessel to the buffer tank; and/or a switching determination step in which a switching timing and an abnormality are determined from the residual quantity of the solid material inside the solid material vessel.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING |
title | SOLID MATERIAL REMAINING AMOUNT MEASUREMENT METHOD, SUBLIMATED GAS SUPPLY METHOD, AND SUBLIMATED GAS SUPPLY SYSTEM |
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