METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH SELECTIVE ETCHING OF SUPERLATTICE TO ACCUMULATE NON-SEMICONDUCTOR ATOMS

A method for making a semiconductor device may include forming a superlattice above a semiconductor layer, the superlattice including a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portio...

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Bibliographische Detailangaben
Hauptverfasser: WEEKS, Keith Doran, CODY, Nyles Wynn, HYTHA, Marek
Format: Patent
Sprache:eng ; fre ; ger
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