EARLY BACKSIDE FIRST POWER DELIVERY NETWORK

EARLY BACKSIDE FIRST POWER DELIVERY NETWORK

A semiconductor structure and method of manufacturing a semiconductor structure having a front side and an opposing backside. An early power delivery network (EBPDN) of wires is built above a substrate layer. Buried power rails (BPRs) are built above levels of the PDN and connected to the EBPDN by s...

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Hauptverfasser: PENNY, Christopher, ANDERSON, Brent, CLEVENGER, Lawrence, LANZILLO, Nicholas
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator PENNY, Christopher
ANDERSON, Brent
CLEVENGER, Lawrence
LANZILLO, Nicholas
description A semiconductor structure and method of manufacturing a semiconductor structure having a front side and an opposing backside. An early power delivery network (EBPDN) of wires is built above a substrate layer. Buried power rails (BPRs) are built above levels of the PDN and connected to the EBPDN by short length via connections that can be self-aligned to the back side buried power rails. Both BPRs and vias connections have a common metallization. A front side level of transistor devices are built at the front side of the structure above the BPRs. The resulting formed buried power rail structure has an aspect ratio of height:width greater than 4:1, a height >3 times a height of the formed via structure; and a via structure having a length greater than a height of the formed conductive power rail structure.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4420163A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4420163A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4420163A13</originalsourceid><addsrcrecordid>eNrjZNB2dQzyiVRwcnT2DvZ0cVVw8wwKDlEI8A93DVJwcfXxDHMNilTwcw0J9w_y5mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BJiZGBoZmxo6GxkQoAQA1_ySY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>EARLY BACKSIDE FIRST POWER DELIVERY NETWORK</title><source>esp@cenet</source><creator>PENNY, Christopher ; ANDERSON, Brent ; CLEVENGER, Lawrence ; LANZILLO, Nicholas</creator><creatorcontrib>PENNY, Christopher ; ANDERSON, Brent ; CLEVENGER, Lawrence ; LANZILLO, Nicholas</creatorcontrib><description>A semiconductor structure and method of manufacturing a semiconductor structure having a front side and an opposing backside. An early power delivery network (EBPDN) of wires is built above a substrate layer. Buried power rails (BPRs) are built above levels of the PDN and connected to the EBPDN by short length via connections that can be self-aligned to the back side buried power rails. Both BPRs and vias connections have a common metallization. A front side level of transistor devices are built at the front side of the structure above the BPRs. The resulting formed buried power rail structure has an aspect ratio of height:width greater than 4:1, a height &gt;3 times a height of the formed via structure; and a via structure having a length greater than a height of the formed conductive power rail structure.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240828&amp;DB=EPODOC&amp;CC=EP&amp;NR=4420163A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240828&amp;DB=EPODOC&amp;CC=EP&amp;NR=4420163A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PENNY, Christopher</creatorcontrib><creatorcontrib>ANDERSON, Brent</creatorcontrib><creatorcontrib>CLEVENGER, Lawrence</creatorcontrib><creatorcontrib>LANZILLO, Nicholas</creatorcontrib><title>EARLY BACKSIDE FIRST POWER DELIVERY NETWORK</title><description>A semiconductor structure and method of manufacturing a semiconductor structure having a front side and an opposing backside. An early power delivery network (EBPDN) of wires is built above a substrate layer. Buried power rails (BPRs) are built above levels of the PDN and connected to the EBPDN by short length via connections that can be self-aligned to the back side buried power rails. Both BPRs and vias connections have a common metallization. A front side level of transistor devices are built at the front side of the structure above the BPRs. The resulting formed buried power rail structure has an aspect ratio of height:width greater than 4:1, a height &gt;3 times a height of the formed via structure; and a via structure having a length greater than a height of the formed conductive power rail structure.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB2dQzyiVRwcnT2DvZ0cVVw8wwKDlEI8A93DVJwcfXxDHMNilTwcw0J9w_y5mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BJiZGBoZmxo6GxkQoAQA1_ySY</recordid><startdate>20240828</startdate><enddate>20240828</enddate><creator>PENNY, Christopher</creator><creator>ANDERSON, Brent</creator><creator>CLEVENGER, Lawrence</creator><creator>LANZILLO, Nicholas</creator><scope>EVB</scope></search><sort><creationdate>20240828</creationdate><title>EARLY BACKSIDE FIRST POWER DELIVERY NETWORK</title><author>PENNY, Christopher ; ANDERSON, Brent ; CLEVENGER, Lawrence ; LANZILLO, Nicholas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4420163A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PENNY, Christopher</creatorcontrib><creatorcontrib>ANDERSON, Brent</creatorcontrib><creatorcontrib>CLEVENGER, Lawrence</creatorcontrib><creatorcontrib>LANZILLO, Nicholas</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PENNY, Christopher</au><au>ANDERSON, Brent</au><au>CLEVENGER, Lawrence</au><au>LANZILLO, Nicholas</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>EARLY BACKSIDE FIRST POWER DELIVERY NETWORK</title><date>2024-08-28</date><risdate>2024</risdate><abstract>A semiconductor structure and method of manufacturing a semiconductor structure having a front side and an opposing backside. An early power delivery network (EBPDN) of wires is built above a substrate layer. Buried power rails (BPRs) are built above levels of the PDN and connected to the EBPDN by short length via connections that can be self-aligned to the back side buried power rails. Both BPRs and vias connections have a common metallization. A front side level of transistor devices are built at the front side of the structure above the BPRs. The resulting formed buried power rail structure has an aspect ratio of height:width greater than 4:1, a height &gt;3 times a height of the formed via structure; and a via structure having a length greater than a height of the formed conductive power rail structure.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title EARLY BACKSIDE FIRST POWER DELIVERY NETWORK
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T01%3A58%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PENNY,%20Christopher&rft.date=2024-08-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP4420163A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true