CARRIER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL ALONG LASER DAMAGE REGION
A crystalline material processing method including bonding a first crystalline carrier to a first surface of a crystalline material, wherein the crystalline material comprises a substrate having a subsurface laser damage region at a depth relative to a first surface of the substrate. The crystalline...
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| creator | BALKAS, Elif EDMOND, John DONOFRIO, Matthew KONG, Hua-Shuang |
| description | A crystalline material processing method including bonding a first crystalline carrier to a first surface of a crystalline material, wherein the crystalline material comprises a substrate having a subsurface laser damage region at a depth relative to a first surface of the substrate. The crystalline material processing method also includes bonding a second crystalline carrier to a second surface of the crystalline material and following the bonding steps, fracturing the crystalline material along or proximate to the subsurface laser damage region to yield a bonded assembly comprising the first crystalline carrier and a portion of the crystalline material removed from the substrate. |
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The crystalline material processing method also includes bonding a second crystalline carrier to a second surface of the crystalline material and following the bonding steps, fracturing the crystalline material along or proximate to the subsurface laser damage region to yield a bonded assembly comprising the first crystalline carrier and a portion of the crystalline material removed from the substrate.</description><language>eng ; fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240724&DB=EPODOC&CC=EP&NR=4403678A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240724&DB=EPODOC&CC=EP&NR=4403678A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BALKAS, Elif</creatorcontrib><creatorcontrib>EDMOND, John</creatorcontrib><creatorcontrib>DONOFRIO, Matthew</creatorcontrib><creatorcontrib>KONG, Hua-Shuang</creatorcontrib><title>CARRIER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL ALONG LASER DAMAGE REGION</title><description>A crystalline material processing method including bonding a first crystalline carrier to a first surface of a crystalline material, wherein the crystalline material comprises a substrate having a subsurface laser damage region at a depth relative to a first surface of the substrate. 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The crystalline material processing method also includes bonding a second crystalline carrier to a second surface of the crystalline material and following the bonding steps, fracturing the crystalline material along or proximate to the subsurface laser damage region to yield a bonded assembly comprising the first crystalline carrier and a portion of the crystalline material removed from the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | CARRIER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL ALONG LASER DAMAGE REGION |
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