DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS
The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate struc...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | MULFINGER, George R KOZARSKY, Eric S ZHAN, Hui ETHIRAJAN, Tamilmani TOKRANOV, Anton V SHANBHAG, Kaustubh |
description | The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate structures (16) overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4401123A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4401123A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4401123A13</originalsourceid><addsrcrecordid>eNrjZDBycQ3zdHZVCPcM8VDwDPb3cQzx9PdTCA4JCnUOCQ1yDVbw9FNwdA7xDHNVCHJ1B8oF8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAExMDQ0MjY0dDYyKUAABDCCaL</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS</title><source>esp@cenet</source><creator>MULFINGER, George R ; KOZARSKY, Eric S ; ZHAN, Hui ; ETHIRAJAN, Tamilmani ; TOKRANOV, Anton V ; SHANBHAG, Kaustubh</creator><creatorcontrib>MULFINGER, George R ; KOZARSKY, Eric S ; ZHAN, Hui ; ETHIRAJAN, Tamilmani ; TOKRANOV, Anton V ; SHANBHAG, Kaustubh</creatorcontrib><description>The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate structures (16) overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240717&DB=EPODOC&CC=EP&NR=4401123A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240717&DB=EPODOC&CC=EP&NR=4401123A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MULFINGER, George R</creatorcontrib><creatorcontrib>KOZARSKY, Eric S</creatorcontrib><creatorcontrib>ZHAN, Hui</creatorcontrib><creatorcontrib>ETHIRAJAN, Tamilmani</creatorcontrib><creatorcontrib>TOKRANOV, Anton V</creatorcontrib><creatorcontrib>SHANBHAG, Kaustubh</creatorcontrib><title>DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS</title><description>The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate structures (16) overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBycQ3zdHZVCPcM8VDwDPb3cQzx9PdTCA4JCnUOCQ1yDVbw9FNwdA7xDHNVCHJ1B8oF8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAExMDQ0MjY0dDYyKUAABDCCaL</recordid><startdate>20240717</startdate><enddate>20240717</enddate><creator>MULFINGER, George R</creator><creator>KOZARSKY, Eric S</creator><creator>ZHAN, Hui</creator><creator>ETHIRAJAN, Tamilmani</creator><creator>TOKRANOV, Anton V</creator><creator>SHANBHAG, Kaustubh</creator><scope>EVB</scope></search><sort><creationdate>20240717</creationdate><title>DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS</title><author>MULFINGER, George R ; KOZARSKY, Eric S ; ZHAN, Hui ; ETHIRAJAN, Tamilmani ; TOKRANOV, Anton V ; SHANBHAG, Kaustubh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4401123A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MULFINGER, George R</creatorcontrib><creatorcontrib>KOZARSKY, Eric S</creatorcontrib><creatorcontrib>ZHAN, Hui</creatorcontrib><creatorcontrib>ETHIRAJAN, Tamilmani</creatorcontrib><creatorcontrib>TOKRANOV, Anton V</creatorcontrib><creatorcontrib>SHANBHAG, Kaustubh</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MULFINGER, George R</au><au>KOZARSKY, Eric S</au><au>ZHAN, Hui</au><au>ETHIRAJAN, Tamilmani</au><au>TOKRANOV, Anton V</au><au>SHANBHAG, Kaustubh</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS</title><date>2024-07-17</date><risdate>2024</risdate><abstract>The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate structures (16) overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; fre ; ger |
recordid | cdi_epo_espacenet_EP4401123A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T08%3A20%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MULFINGER,%20George%20R&rft.date=2024-07-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP4401123A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |