SEMICONDUCTOR DEVICE AND METHOD OF FORMING THEREOF

Provided is a device comprising a semiconductor device on a substrate, the semiconductor device having at least two sides and including a bottom dielectric isolation; a channel structure and a gate at least partially surrounding the channel structure; a plurality of source/drain structures on opposing sides of the channel structure; and one or more metal signal routing layers disposed on an opposite side of the semiconductor device than the substrate, wherein the substrate is on a first side of the semiconductor device and includes: a backside power rail, BPR; a backside contact structure, the backside contact structure vertically between the backside power rail and a first source/drain structure, wherein the backside contact structure comprises a first portion contacting the first source/drain structure, having a positive slope, wherein the backside contact structure further comprises a second portion adjacent to the first portion having no slope, extending from the first portion to a distance further distal from the first source/drain structure.