A METHOD OF MANUFACTURING AN INTEGRATED DEVICE COMPRISING ANODIC POROUS OXIDE WITH LIMITED ROUGHNESS

A METHOD OF MANUFACTURING AN INTEGRATED DEVICE COMPRISING ANODIC POROUS OXIDE WITH LIMITED ROUGHNESS

A method of manufacturing an integrated device comprising an anodic porousoxide region comprising:forming, on a substrate, a metal anodization barrier layer,planarizing the metal anodization barrier layer,forming, on the planarized metal anodization barrier layer (201P), an anodizable metal layer,pl...

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Bibliographische Detailangaben
Hauptverfasser: DOMINGUEZ, Sébastien, VOIRON, Frédéric, BAUDIN, Floriane, SOULIER, Brigitte, ARCHAMBAULT, Sophie
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
APPARATUS THEREFOR
CHEMISTRY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
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Beschreibung
Zusammenfassung:A method of manufacturing an integrated device comprising an anodic porousoxide region comprising:forming, on a substrate, a metal anodization barrier layer,planarizing the metal anodization barrier layer,forming, on the planarized metal anodization barrier layer (201P), an anodizable metal layer,planarizing the anodizable metal layer,anodizing the planarized anodizable metal layer to obtain the anodic porous oxide region (203) comprising a plurality of substantially straight pores that extend from a top surface of the anodic porous oxide region towards the metal anodization barrier layer.