VARIABLE CAPACITANCE ELEMENT

VARIABLE CAPACITANCE ELEMENT

A variable capacitance element (100) includes a substrate (101), a first semiconductor layer (103), a two-dimensional electron gas layer (120), a first electrode (107) including a first terminal, and a second terminal (108). The two-dimensional electron gas layer (120) below the first electrode (107...

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Hauptverfasser: TAKAMI, Yoshinori, NISHIO, Akihiko
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator TAKAMI, Yoshinori
NISHIO, Akihiko
description A variable capacitance element (100) includes a substrate (101), a first semiconductor layer (103), a two-dimensional electron gas layer (120), a first electrode (107) including a first terminal, and a second terminal (108). The two-dimensional electron gas layer (120) below the first electrode (107) functions as a second electrode (123). The interval between the bottom surface of the first electrode (107) and the top surface of the first semiconductor layer (103) monotonically increases in a first direction from the first electrode (107) toward the second terminal (108) or in a second direction orthogonal to the first direction. A capacitance value between the first electrode (107) and the second electrode (123) changes according to the voltage applied between the first electrode (107) and the second terminal (108).
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title VARIABLE CAPACITANCE ELEMENT
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