VERTICAL MEMORY DEVICE

A memory device may include word line patterns stacked on a substrate and spaced from each other in a vertical direction, a channel structure extending in the vertical direction, and first contact plugs and second contact plugs extending in the vertical direction. The substrate includes a cell area,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIM, Bongsoon, SHIN, Dongha, JEONG, Jeawon
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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