CLEANING COMPOSITION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor el...
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creator | INABA, Tadashi MURO, Naotsugu KAMIMURA, Tetsuya |
description | An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant, and water, in which a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150, a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500, and a pH is 0.10 to 4.00. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4358117A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4358117A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4358117A43</originalsourceid><addsrcrecordid>eNrjZCh09nF19PP0c1dw9vcN8A_2DPH099NR8HUN8fB3UXDzD1KAKwh29fV09vdzCXUOAQoHhzoFhwQ5hrjqKDj6uSBrCAjyB6rB1OHq4-rr6hfCw8CalphTnMoLpbkZFNxcQ5w9dFML8uNTiwsSk1PzUkviXQNMjE0tDA3NHU2MiVACAMFNOAE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CLEANING COMPOSITION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT</title><source>esp@cenet</source><creator>INABA, Tadashi ; MURO, Naotsugu ; KAMIMURA, Tetsuya</creator><creatorcontrib>INABA, Tadashi ; MURO, Naotsugu ; KAMIMURA, Tetsuya</creatorcontrib><description>An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant, and water, in which a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150, a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500, and a pH is 0.10 to 4.00.</description><language>eng ; fre ; ger</language><subject>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES ; BASIC ELECTRIC ELEMENTS ; CANDLES ; CHEMISTRY ; DETERGENT COMPOSITIONS ; DETERGENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FATTY ACIDS THEREFROM ; METALLURGY ; RECOVERY OF GLYCEROL ; RESIN SOAPS ; SEMICONDUCTOR DEVICES ; SOAP OR SOAP-MAKING ; USE OF SINGLE SUBSTANCES AS DETERGENTS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241016&DB=EPODOC&CC=EP&NR=4358117A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241016&DB=EPODOC&CC=EP&NR=4358117A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>INABA, Tadashi</creatorcontrib><creatorcontrib>MURO, Naotsugu</creatorcontrib><creatorcontrib>KAMIMURA, Tetsuya</creatorcontrib><title>CLEANING COMPOSITION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT</title><description>An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant, and water, in which a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150, a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500, and a pH is 0.10 to 4.00.</description><subject>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CANDLES</subject><subject>CHEMISTRY</subject><subject>DETERGENT COMPOSITIONS</subject><subject>DETERGENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FATTY ACIDS THEREFROM</subject><subject>METALLURGY</subject><subject>RECOVERY OF GLYCEROL</subject><subject>RESIN SOAPS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOAP OR SOAP-MAKING</subject><subject>USE OF SINGLE SUBSTANCES AS DETERGENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZCh09nF19PP0c1dw9vcN8A_2DPH099NR8HUN8fB3UXDzD1KAKwh29fV09vdzCXUOAQoHhzoFhwQ5hrjqKDj6uSBrCAjyB6rB1OHq4-rr6hfCw8CalphTnMoLpbkZFNxcQ5w9dFML8uNTiwsSk1PzUkviXQNMjE0tDA3NHU2MiVACAMFNOAE</recordid><startdate>20241016</startdate><enddate>20241016</enddate><creator>INABA, Tadashi</creator><creator>MURO, Naotsugu</creator><creator>KAMIMURA, Tetsuya</creator><scope>EVB</scope></search><sort><creationdate>20241016</creationdate><title>CLEANING COMPOSITION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT</title><author>INABA, Tadashi ; MURO, Naotsugu ; KAMIMURA, Tetsuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4358117A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CANDLES</topic><topic>CHEMISTRY</topic><topic>DETERGENT COMPOSITIONS</topic><topic>DETERGENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FATTY ACIDS THEREFROM</topic><topic>METALLURGY</topic><topic>RECOVERY OF GLYCEROL</topic><topic>RESIN SOAPS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOAP OR SOAP-MAKING</topic><topic>USE OF SINGLE SUBSTANCES AS DETERGENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>INABA, Tadashi</creatorcontrib><creatorcontrib>MURO, Naotsugu</creatorcontrib><creatorcontrib>KAMIMURA, Tetsuya</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>INABA, Tadashi</au><au>MURO, Naotsugu</au><au>KAMIMURA, Tetsuya</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CLEANING COMPOSITION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT</title><date>2024-10-16</date><risdate>2024</risdate><abstract>An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant, and water, in which a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150, a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500, and a pH is 0.10 to 4.00.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM METALLURGY RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS |
title | CLEANING COMPOSITION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT |
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