CLEANING COMPOSITION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor el...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant, and water, in which a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150, a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500, and a pH is 0.10 to 4.00. |
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