PHOTOLITHOGRAPHY METHOD BASED ON BILAYER PHOTORESIST

The present invention pertains to a photolithography method based on bilayer photoresist, the method comprising the following steps: (1) applying one layer of positive photoresist on a substrate and drying, then applying one layer of negative photoresist on the positive photoresist and drying; (2) e...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	GAO, Yijiao
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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