SEMICONDUCTOR DEVICES WITH A STRUCTURE CAPABLE OF SUPPRESSING COUPLING NOISE SUPPRESSION

SEMICONDUCTOR DEVICES WITH A STRUCTURE CAPABLE OF SUPPRESSING COUPLING NOISE SUPPRESSION

A semiconductor device (100) includes an electronic device (110), a guard trace (120) and a first trace (T1). The guard trace (120) is connecting to a ground layer through a first ground via (G_Via_11). The first trace (T1) is disposed adjacent to the electronic device (110) and the guard trace (120...

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Hauptverfasser: LI, Po-Jui, LU, Yen-Ju, YEH, Chun-Yuan, SUN, Ruey-Bo, LIN, Sheng-Mou
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LI, Po-Jui
LU, Yen-Ju
YEH, Chun-Yuan
SUN, Ruey-Bo
LIN, Sheng-Mou
description A semiconductor device (100) includes an electronic device (110), a guard trace (120) and a first trace (T1). The guard trace (120) is connecting to a ground layer through a first ground via (G_Via_11). The first trace (T1) is disposed adjacent to the electronic device (110) and the guard trace (120) and includes a first segment. A phase or a direction of a first current signal conducted on the first trace (T1) is changed in the first segment. The electronic device (110) and the first trace (T1) are disposed at different sides of the guard trace (120) and the first ground via (G_Via_11) is beside the first segment.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICES WITH A STRUCTURE CAPABLE OF SUPPRESSING COUPLING NOISE SUPPRESSION
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