METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN SINGLE-CRYSTAL SEMICONDUCTOR LAYER ON A CARRIER SUBSTRATE

A method of manufacturing a composite structure comprises: a) providing a donor substrate of a single-crystal semiconductor material, b) implanting ions into the donor substrate, excluding an annular peripheral region, to form a buried brittle plane, the implantation conditions defining a first ther...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LANDRU, Didier, BIARD, Hugo
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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