STATIC RANDOM-ACCESS MEMORY (SRAM) ARRAY CIRCUITS INCLUDING BILATERAL WELL TAP CELLS WITH REDUCED WIDTH FOLDED FINGER STRUCTURE

An SRAM array circuit in which a horizontal N-well of a well tap cell in a first row separated from a horizontal N-well of a well tap cell in a second row by a P-type substrate region is disclosed. The well tap cells include a bilateral P-type well tap disposed in the P-type substrate region between...

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Bibliographische Detailangaben

Hauptverfasser:	KODLIPET, Pradeep Jayadev, DESAI, Channappa, GAO, Yandong, SHARMA, Sunil, SRIKANTH, Anne
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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