METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE

A method for manufacturing a semiconductor structure comprises: a) providing a temporary substrate comprising a material having a coefficient of thermal expansion close to that of silicon carbide; b) forming an intermediate graphite layer on a front face of the temporary substrate; c) depositing, on...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GAUDIN, Gweltaz, BIARD, Hugo
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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