TREATMENTS TO IMPROVE DEVICE PERFORMANCE
A method of forming a semiconductor structure includes annealing a surface of a substrate in an ambient of hydrogen to smooth the surface, pre-cleaning the surface of the substrate, depositing a high-κ dielectric layer on the pre-cleaned surface of the substrate, performing a re-oxidation process to...
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| creator | WANG, Linlin COLOMBEAU, Benjamin SWENBERG, Johanes F DONG, Lin HUNG, Steven C.H |
| description | A method of forming a semiconductor structure includes annealing a surface of a substrate in an ambient of hydrogen to smooth the surface, pre-cleaning the surface of the substrate, depositing a high-κ dielectric layer on the pre-cleaned surface of the substrate, performing a re-oxidation process to thermally oxidize the surface of the substrate; performing a plasma nitridation process to insert nitrogen atoms in the deposited high-κ dielectric layer, and performing a post-nitridation anneal process to passivate chemical bonds in the plasma nitridated high-κ dielectric layer. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | TREATMENTS TO IMPROVE DEVICE PERFORMANCE |
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