GRADED DOPING IN POWER DEVICES

Exemplary methods of forming a semiconductor structure may include forming a doped silicon layer on a semiconductor substrate. A level of doping may be increased at an increasing distance from the semiconductor substrate. The methods may include etching the doped silicon layer to define a trench ext...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BAZIZI, El Mehdi, PAL, Ashish, SHERWOOD, Tyler, CHEN, Xing, KRISHNAN, Siddarth, YU, Lan
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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