SELECTIVE DEPOSITION OF SILICON DIELECTRIC FILM
A method for selective deposition of a silicon and oxygen containing dielectric film onto a substrate is disclosed. The method includes the steps of providing a substrate comprising a dielectric surface and a metal, or metal hydride, surface to a reactor. A halogenated silicon-containing compound ma...
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| creator | LEI, Xinjian CHANDRA, Haripin PEARLSTEIN, Ronald M |
| description | A method for selective deposition of a silicon and oxygen containing dielectric film onto a substrate is disclosed. The method includes the steps of providing a substrate comprising a dielectric surface and a metal, or metal hydride, surface to a reactor. A halogenated silicon-containing compound may be introduced to the reactor to form a silicon-containing layer more abundantly on the dielectric surface than on the metal, or metal hydride, surface. A nitrogen source may be introduced into the reactor to react with the silicon-containing layer to form a silicon nitride film or a carbon doped silicon nitride film. An oxygen-containing source may be introduced to the reactor to react with the silicon nitride or carbon doped silicon nitride film to form the silicon and oxygen containing dielectric film. |
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The method includes the steps of providing a substrate comprising a dielectric surface and a metal, or metal hydride, surface to a reactor. A halogenated silicon-containing compound may be introduced to the reactor to form a silicon-containing layer more abundantly on the dielectric surface than on the metal, or metal hydride, surface. A nitrogen source may be introduced into the reactor to react with the silicon-containing layer to form a silicon nitride film or a carbon doped silicon nitride film. An oxygen-containing source may be introduced to the reactor to react with the silicon nitride or carbon doped silicon nitride film to form the silicon and oxygen containing dielectric film.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240807&DB=EPODOC&CC=EP&NR=4284958A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240807&DB=EPODOC&CC=EP&NR=4284958A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEI, Xinjian</creatorcontrib><creatorcontrib>CHANDRA, Haripin</creatorcontrib><creatorcontrib>PEARLSTEIN, Ronald M</creatorcontrib><title>SELECTIVE DEPOSITION OF SILICON DIELECTRIC FILM</title><description>A method for selective deposition of a silicon and oxygen containing dielectric film onto a substrate is disclosed. The method includes the steps of providing a substrate comprising a dielectric surface and a metal, or metal hydride, surface to a reactor. A halogenated silicon-containing compound may be introduced to the reactor to form a silicon-containing layer more abundantly on the dielectric surface than on the metal, or metal hydride, surface. A nitrogen source may be introduced into the reactor to react with the silicon-containing layer to form a silicon nitride film or a carbon doped silicon nitride film. 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The method includes the steps of providing a substrate comprising a dielectric surface and a metal, or metal hydride, surface to a reactor. A halogenated silicon-containing compound may be introduced to the reactor to form a silicon-containing layer more abundantly on the dielectric surface than on the metal, or metal hydride, surface. A nitrogen source may be introduced into the reactor to react with the silicon-containing layer to form a silicon nitride film or a carbon doped silicon nitride film. An oxygen-containing source may be introduced to the reactor to react with the silicon nitride or carbon doped silicon nitride film to form the silicon and oxygen containing dielectric film.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SELECTIVE DEPOSITION OF SILICON DIELECTRIC FILM |
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