INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHODS OF FORMING THE SAME

Methods of forming an integrated circuit devices may include providing first and second active regions (12_1, 12_2), an isolation layer (11), and first and second sacrificial stack structures. The first and second sacrificial stack structures may contact the first and second active regions (12_1, 12...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HWANG, Inchan, SEO, Kang-Ill, JO, Gunho, HONG, Wonhyuk, JUNG, Myunghoon
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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