FERROELECTRIC MEMORY AND STORAGE DEVICE

This application provides a ferroelectric memory and a storage device, to reduce an operating voltage, reduce an interface defect in the ferroelectric memory, and improve durability of the ferroelectric memory. The ferroelectric memory includes at least one storage cell. Each storage cell includes a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HOU, Zhaozhao, ZHANG, Yu, FANG, Yichen, XU, Jeffrey Junhao, BU, Sitong
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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