LIGHT EMITTING DIODE DEVICE

LIGHT EMITTING DIODE DEVICE

Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a refl...

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Hauptverfasser: ARMITAGE, Robert, WILDESON, Isaac
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ARMITAGE, Robert
WILDESON, Isaac
description Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4260381A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4260381A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4260381A13</originalsourceid><addsrcrecordid>eNrjZJD28XT3CFFw9fUMCfH0c1dw8fR3cVVwcQ3zdHblYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgEmRmYGxhaGjobGRCgBAAE6H-g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LIGHT EMITTING DIODE DEVICE</title><source>esp@cenet</source><creator>ARMITAGE, Robert ; WILDESON, Isaac</creator><creatorcontrib>ARMITAGE, Robert ; WILDESON, Isaac</creatorcontrib><description>Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231018&amp;DB=EPODOC&amp;CC=EP&amp;NR=4260381A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231018&amp;DB=EPODOC&amp;CC=EP&amp;NR=4260381A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ARMITAGE, Robert</creatorcontrib><creatorcontrib>WILDESON, Isaac</creatorcontrib><title>LIGHT EMITTING DIODE DEVICE</title><description>Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD28XT3CFFw9fUMCfH0c1dw8fR3cVVwcQ3zdHblYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgEmRmYGxhaGjobGRCgBAAE6H-g</recordid><startdate>20231018</startdate><enddate>20231018</enddate><creator>ARMITAGE, Robert</creator><creator>WILDESON, Isaac</creator><scope>EVB</scope></search><sort><creationdate>20231018</creationdate><title>LIGHT EMITTING DIODE DEVICE</title><author>ARMITAGE, Robert ; WILDESON, Isaac</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4260381A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ARMITAGE, Robert</creatorcontrib><creatorcontrib>WILDESON, Isaac</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ARMITAGE, Robert</au><au>WILDESON, Isaac</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT EMITTING DIODE DEVICE</title><date>2023-10-18</date><risdate>2023</risdate><abstract>Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title LIGHT EMITTING DIODE DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T18%3A57%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ARMITAGE,%20Robert&rft.date=2023-10-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP4260381A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true