COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN

The use of a cleaning composition in combination with one or more oxidants is described for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask comprising or consisting of a material selec...

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Bibliographische Detailangaben
Hauptverfasser: Klipp, Andreas, Wang, Che Wei, Hoogboom, Joannes Theodorus Valentinus, Ke, Jhih Jheng, Ting, Chia Ching
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
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