COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN
The use of a cleaning composition in combination with one or more oxidants is described for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask comprising or consisting of a material selec...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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