A METHOD FOR MANUFACTURING A SUBSTRATE WAFER FOR BUILDING GROUP III-V DEVICES THEREON AND A SUBSTRATE WAFER FOR BUILDING GROUP III-V DEVICES THEREON

A METHOD FOR MANUFACTURING A SUBSTRATE WAFER FOR BUILDING GROUP III-V DEVICES THEREON AND A SUBSTRATE WAFER FOR BUILDING GROUP III-V DEVICES THEREON

A method for manufacturing a substrate wafer for building group III-V devices thereon, comprisingproviding a silicon single crystal wafer;forming a gettering region below a top surface of the silicon single crystal wafer;forming a nitrogen enriched passivation layer representing a top portion of the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Thapa, Sarad Bahadur, Murphy, Brian
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for manufacturing a substrate wafer for building group III-V devices thereon, comprisingproviding a silicon single crystal wafer;forming a gettering region below a top surface of the silicon single crystal wafer;forming a nitrogen enriched passivation layer representing a top portion of the substrate wafer.