SEMICONDUCTOR DEVICE

We herein describe a power semiconductor device having a semiconductor substrate including an active region and an edge termination region surrounding the active region, an edge termination structure located in the edge termination region of the semiconductor substrate, and a plurality of oxide segm...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: NGWENDSON, Luther-King
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!