METAL-INSULATOR-METAL (MIM) ENERGY STORAGE DEVICE WITH LAYERED STACK AND MANUFACTURING METHOD
A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternat...
Gespeichert in:
Hauptverfasser: | , , , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | JOHANSSON, Anders TIVERMAN, Ola LUNDAHL, Karl SALEEM, Muhammad Amin BYLUND, Maria ANDERSSON, Rickard KABIR, M Shafiqul MARKNÄS, Victor DESMARIS, Vincent |
description | A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd-numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4136664A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4136664A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4136664A13</originalsourceid><addsrcrecordid>eNrjZIj1dQ1x9NH19AsO9XEM8Q_SBfMVNHw9fTUVXP1cg9wjFYKB4o7urgourmGezq4K4Z4hHgo-jpGuQa4uQDlHZ28FRz8XBV9Hv1A3R-eQ0CBPP3cFoDEe_i48DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeNcDE0NjMzMzE0dCYCCUAbucyDA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METAL-INSULATOR-METAL (MIM) ENERGY STORAGE DEVICE WITH LAYERED STACK AND MANUFACTURING METHOD</title><source>esp@cenet</source><creator>JOHANSSON, Anders ; TIVERMAN, Ola ; LUNDAHL, Karl ; SALEEM, Muhammad Amin ; BYLUND, Maria ; ANDERSSON, Rickard ; KABIR, M Shafiqul ; MARKNÄS, Victor ; DESMARIS, Vincent</creator><creatorcontrib>JOHANSSON, Anders ; TIVERMAN, Ola ; LUNDAHL, Karl ; SALEEM, Muhammad Amin ; BYLUND, Maria ; ANDERSSON, Rickard ; KABIR, M Shafiqul ; MARKNÄS, Victor ; DESMARIS, Vincent</creatorcontrib><description>A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd-numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MANUFACTURE OR TREATMENT THEREOF ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; PRINTED CIRCUITS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230222&DB=EPODOC&CC=EP&NR=4136664A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230222&DB=EPODOC&CC=EP&NR=4136664A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOHANSSON, Anders</creatorcontrib><creatorcontrib>TIVERMAN, Ola</creatorcontrib><creatorcontrib>LUNDAHL, Karl</creatorcontrib><creatorcontrib>SALEEM, Muhammad Amin</creatorcontrib><creatorcontrib>BYLUND, Maria</creatorcontrib><creatorcontrib>ANDERSSON, Rickard</creatorcontrib><creatorcontrib>KABIR, M Shafiqul</creatorcontrib><creatorcontrib>MARKNÄS, Victor</creatorcontrib><creatorcontrib>DESMARIS, Vincent</creatorcontrib><title>METAL-INSULATOR-METAL (MIM) ENERGY STORAGE DEVICE WITH LAYERED STACK AND MANUFACTURING METHOD</title><description>A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd-numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MANUFACTURE OR TREATMENT THEREOF</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PRINTED CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIj1dQ1x9NH19AsO9XEM8Q_SBfMVNHw9fTUVXP1cg9wjFYKB4o7urgourmGezq4K4Z4hHgo-jpGuQa4uQDlHZ28FRz8XBV9Hv1A3R-eQ0CBPP3cFoDEe_i48DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeNcDE0NjMzMzE0dCYCCUAbucyDA</recordid><startdate>20230222</startdate><enddate>20230222</enddate><creator>JOHANSSON, Anders</creator><creator>TIVERMAN, Ola</creator><creator>LUNDAHL, Karl</creator><creator>SALEEM, Muhammad Amin</creator><creator>BYLUND, Maria</creator><creator>ANDERSSON, Rickard</creator><creator>KABIR, M Shafiqul</creator><creator>MARKNÄS, Victor</creator><creator>DESMARIS, Vincent</creator><scope>EVB</scope></search><sort><creationdate>20230222</creationdate><title>METAL-INSULATOR-METAL (MIM) ENERGY STORAGE DEVICE WITH LAYERED STACK AND MANUFACTURING METHOD</title><author>JOHANSSON, Anders ; TIVERMAN, Ola ; LUNDAHL, Karl ; SALEEM, Muhammad Amin ; BYLUND, Maria ; ANDERSSON, Rickard ; KABIR, M Shafiqul ; MARKNÄS, Victor ; DESMARIS, Vincent</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4136664A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MANUFACTURE OR TREATMENT THEREOF</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PRINTED CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>JOHANSSON, Anders</creatorcontrib><creatorcontrib>TIVERMAN, Ola</creatorcontrib><creatorcontrib>LUNDAHL, Karl</creatorcontrib><creatorcontrib>SALEEM, Muhammad Amin</creatorcontrib><creatorcontrib>BYLUND, Maria</creatorcontrib><creatorcontrib>ANDERSSON, Rickard</creatorcontrib><creatorcontrib>KABIR, M Shafiqul</creatorcontrib><creatorcontrib>MARKNÄS, Victor</creatorcontrib><creatorcontrib>DESMARIS, Vincent</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JOHANSSON, Anders</au><au>TIVERMAN, Ola</au><au>LUNDAHL, Karl</au><au>SALEEM, Muhammad Amin</au><au>BYLUND, Maria</au><au>ANDERSSON, Rickard</au><au>KABIR, M Shafiqul</au><au>MARKNÄS, Victor</au><au>DESMARIS, Vincent</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METAL-INSULATOR-METAL (MIM) ENERGY STORAGE DEVICE WITH LAYERED STACK AND MANUFACTURING METHOD</title><date>2023-02-22</date><risdate>2023</risdate><abstract>A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd-numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; fre ; ger |
recordid | cdi_epo_espacenet_EP4136664A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PRINTED CIRCUITS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
title | METAL-INSULATOR-METAL (MIM) ENERGY STORAGE DEVICE WITH LAYERED STACK AND MANUFACTURING METHOD |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-13T05%3A50%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JOHANSSON,%20Anders&rft.date=2023-02-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP4136664A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |