PRECURSORS AND METHODS FOR PREPARING SILICON-CONTAINING FILMS
Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods f...
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| creator | LEE, SangJin CHO, Sungsil CHANG, Seobong KIM, DaHye HENDRIX, Bryan C BAUM, Thomas H LEE, SooJin PARK, Jae Eon |
| description | Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4126886A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4126886A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4126886A43</originalsourceid><addsrcrecordid>eNrjZLANCHJ1Dg0K9g8KVnD0c1HwdQ3x8HcJVnDzD1IASgU4Bnn6uSsEe_p4Ovv76QJxiKOnH0jIzdPHN5iHgTUtMac4lRdKczMouLmGOHvophbkx6cWFyQmp-allsS7BpgYGplZWJg5mhgToQQAAOQpyQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PRECURSORS AND METHODS FOR PREPARING SILICON-CONTAINING FILMS</title><source>esp@cenet</source><creator>LEE, SangJin ; CHO, Sungsil ; CHANG, Seobong ; KIM, DaHye ; HENDRIX, Bryan C ; BAUM, Thomas H ; LEE, SooJin ; PARK, Jae Eon</creator><creatorcontrib>LEE, SangJin ; CHO, Sungsil ; CHANG, Seobong ; KIM, DaHye ; HENDRIX, Bryan C ; BAUM, Thomas H ; LEE, SooJin ; PARK, Jae Eon</creatorcontrib><description>Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.</description><language>eng ; fre ; ger</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240501&DB=EPODOC&CC=EP&NR=4126886A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240501&DB=EPODOC&CC=EP&NR=4126886A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, SangJin</creatorcontrib><creatorcontrib>CHO, Sungsil</creatorcontrib><creatorcontrib>CHANG, Seobong</creatorcontrib><creatorcontrib>KIM, DaHye</creatorcontrib><creatorcontrib>HENDRIX, Bryan C</creatorcontrib><creatorcontrib>BAUM, Thomas H</creatorcontrib><creatorcontrib>LEE, SooJin</creatorcontrib><creatorcontrib>PARK, Jae Eon</creatorcontrib><title>PRECURSORS AND METHODS FOR PREPARING SILICON-CONTAINING FILMS</title><description>Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLANCHJ1Dg0K9g8KVnD0c1HwdQ3x8HcJVnDzD1IASgU4Bnn6uSsEe_p4Ovv76QJxiKOnH0jIzdPHN5iHgTUtMac4lRdKczMouLmGOHvophbkx6cWFyQmp-allsS7BpgYGplZWJg5mhgToQQAAOQpyQ</recordid><startdate>20240501</startdate><enddate>20240501</enddate><creator>LEE, SangJin</creator><creator>CHO, Sungsil</creator><creator>CHANG, Seobong</creator><creator>KIM, DaHye</creator><creator>HENDRIX, Bryan C</creator><creator>BAUM, Thomas H</creator><creator>LEE, SooJin</creator><creator>PARK, Jae Eon</creator><scope>EVB</scope></search><sort><creationdate>20240501</creationdate><title>PRECURSORS AND METHODS FOR PREPARING SILICON-CONTAINING FILMS</title><author>LEE, SangJin ; CHO, Sungsil ; CHANG, Seobong ; KIM, DaHye ; HENDRIX, Bryan C ; BAUM, Thomas H ; LEE, SooJin ; PARK, Jae Eon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4126886A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, SangJin</creatorcontrib><creatorcontrib>CHO, Sungsil</creatorcontrib><creatorcontrib>CHANG, Seobong</creatorcontrib><creatorcontrib>KIM, DaHye</creatorcontrib><creatorcontrib>HENDRIX, Bryan C</creatorcontrib><creatorcontrib>BAUM, Thomas H</creatorcontrib><creatorcontrib>LEE, SooJin</creatorcontrib><creatorcontrib>PARK, Jae Eon</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, SangJin</au><au>CHO, Sungsil</au><au>CHANG, Seobong</au><au>KIM, DaHye</au><au>HENDRIX, Bryan C</au><au>BAUM, Thomas H</au><au>LEE, SooJin</au><au>PARK, Jae Eon</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRECURSORS AND METHODS FOR PREPARING SILICON-CONTAINING FILMS</title><date>2024-05-01</date><risdate>2024</risdate><abstract>Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PRECURSORS AND METHODS FOR PREPARING SILICON-CONTAINING FILMS |
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