NANOWIRE WITH REDUCED DEFECTS

A nanowire structure includes a substrate, a patterned mask layer on the substrate, and a nanowire. The patterned mask layer is on the substrate and includes an opening through which the substrate is exposed. The nanowire is on the substrate in the opening of the patterned mask layer. The nanowire i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GARDNER, Geoffrey C, KALLAHER, Raymond L, GRONIN, Sergei V
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:A nanowire structure includes a substrate, a patterned mask layer on the substrate, and a nanowire. The patterned mask layer is on the substrate and includes an opening through which the substrate is exposed. The nanowire is on the substrate in the opening of the patterned mask layer. The nanowire includes a buffer layer on the substrate, a defect filtering layer on the buffer layer, and an active layer on the defect filtering layer. The defect filtering layer is a strained layer. By providing the defect filtering layer between the buffer layer and the active layer of the nanowire, defects present in the buffer layer can be prevented from propagating into the active layer. Accordingly, defects in the active layer of the nanowire are reduced, thereby improving the performance of the nanowire structure.