PHOTORESIST REMOVAL METHOD AND PHOTORESIST REMOVAL SYSTEM
This application relates to a photoresist removal method and a photoresist removal system, and to the field of chip manufacturing technologies. The method includes: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photor...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | DAI, Maochun HUAI, Sainan ZHAO, Zhongping ZHOU, Yu ZHANG, Wenlong |
| description | This application relates to a photoresist removal method and a photoresist removal system, and to the field of chip manufacturing technologies. The method includes: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with a new first organic solvent after the first duration; performing, in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer after the second duration; and drying the target wafer with the solvent removed by simultaneous centrifugal drying and gas purging to obtain the target wafer with the photoresist removed. Through the above method, the treatment effect of the photoresist is improved, and at the same time the product quality of the obtained metal devices is enhanced. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4095605B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4095605B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4095605B13</originalsourceid><addsrcrecordid>eNrjZLAM8PAP8Q9yDfYMDlEIcvX1D3P0UfB1DfHwd1Fw9HNRwCYdHBkc4urLw8CalphTnMoLpbkZFNxcQ5w9dFML8uNTiwsSk1PzUkviXQNMDCxNzQxMnQyNiVACAIEBKPE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTORESIST REMOVAL METHOD AND PHOTORESIST REMOVAL SYSTEM</title><source>esp@cenet</source><creator>DAI, Maochun ; HUAI, Sainan ; ZHAO, Zhongping ; ZHOU, Yu ; ZHANG, Wenlong</creator><creatorcontrib>DAI, Maochun ; HUAI, Sainan ; ZHAO, Zhongping ; ZHOU, Yu ; ZHANG, Wenlong</creatorcontrib><description>This application relates to a photoresist removal method and a photoresist removal system, and to the field of chip manufacturing technologies. The method includes: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with a new first organic solvent after the first duration; performing, in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer after the second duration; and drying the target wafer with the solvent removed by simultaneous centrifugal drying and gas purging to obtain the target wafer with the photoresist removed. Through the above method, the treatment effect of the photoresist is improved, and at the same time the product quality of the obtained metal devices is enhanced.</description><language>eng ; fre ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231129&DB=EPODOC&CC=EP&NR=4095605B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231129&DB=EPODOC&CC=EP&NR=4095605B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAI, Maochun</creatorcontrib><creatorcontrib>HUAI, Sainan</creatorcontrib><creatorcontrib>ZHAO, Zhongping</creatorcontrib><creatorcontrib>ZHOU, Yu</creatorcontrib><creatorcontrib>ZHANG, Wenlong</creatorcontrib><title>PHOTORESIST REMOVAL METHOD AND PHOTORESIST REMOVAL SYSTEM</title><description>This application relates to a photoresist removal method and a photoresist removal system, and to the field of chip manufacturing technologies. The method includes: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with a new first organic solvent after the first duration; performing, in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer after the second duration; and drying the target wafer with the solvent removed by simultaneous centrifugal drying and gas purging to obtain the target wafer with the photoresist removed. Through the above method, the treatment effect of the photoresist is improved, and at the same time the product quality of the obtained metal devices is enhanced.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAM8PAP8Q9yDfYMDlEIcvX1D3P0UfB1DfHwd1Fw9HNRwCYdHBkc4urLw8CalphTnMoLpbkZFNxcQ5w9dFML8uNTiwsSk1PzUkviXQNMDCxNzQxMnQyNiVACAIEBKPE</recordid><startdate>20231129</startdate><enddate>20231129</enddate><creator>DAI, Maochun</creator><creator>HUAI, Sainan</creator><creator>ZHAO, Zhongping</creator><creator>ZHOU, Yu</creator><creator>ZHANG, Wenlong</creator><scope>EVB</scope></search><sort><creationdate>20231129</creationdate><title>PHOTORESIST REMOVAL METHOD AND PHOTORESIST REMOVAL SYSTEM</title><author>DAI, Maochun ; HUAI, Sainan ; ZHAO, Zhongping ; ZHOU, Yu ; ZHANG, Wenlong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4095605B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>DAI, Maochun</creatorcontrib><creatorcontrib>HUAI, Sainan</creatorcontrib><creatorcontrib>ZHAO, Zhongping</creatorcontrib><creatorcontrib>ZHOU, Yu</creatorcontrib><creatorcontrib>ZHANG, Wenlong</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAI, Maochun</au><au>HUAI, Sainan</au><au>ZHAO, Zhongping</au><au>ZHOU, Yu</au><au>ZHANG, Wenlong</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTORESIST REMOVAL METHOD AND PHOTORESIST REMOVAL SYSTEM</title><date>2023-11-29</date><risdate>2023</risdate><abstract>This application relates to a photoresist removal method and a photoresist removal system, and to the field of chip manufacturing technologies. The method includes: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with a new first organic solvent after the first duration; performing, in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer after the second duration; and drying the target wafer with the solvent removed by simultaneous centrifugal drying and gas purging to obtain the target wafer with the photoresist removed. Through the above method, the treatment effect of the photoresist is improved, and at the same time the product quality of the obtained metal devices is enhanced.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP4095605B1 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | PHOTORESIST REMOVAL METHOD AND PHOTORESIST REMOVAL SYSTEM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T23%3A47%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DAI,%20Maochun&rft.date=2023-11-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP4095605B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |