PHASE CHANGE SWITCH DEVICE AND METHOD FOR MANUFACTURING THE SAME
A switch device is disclosed which includes an electrically conducting layer (23) arranged between a phase change switch (26-29) and a substrate (21). The conductive layer has a resistivity of 10-4 Ω·m or less, and may include a metal layer or a semiconductor layer having a dopant concentration of a...
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creator | BUTSCHKOW, Christian TADDIKEN, Hans HEISS, Dominik KADOW, Christoph |
description | A switch device is disclosed which includes an electrically conducting layer (23) arranged between a phase change switch (26-29) and a substrate (21). The conductive layer has a resistivity of 10-4 Ω·m or less, and may include a metal layer or a semiconductor layer having a dopant concentration of at least 1019/cm3. |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | PHASE CHANGE SWITCH DEVICE AND METHOD FOR MANUFACTURING THE SAME |
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