PHASE CHANGE SWITCH DEVICE AND METHOD FOR MANUFACTURING THE SAME

A switch device is disclosed which includes an electrically conducting layer (23) arranged between a phase change switch (26-29) and a substrate (21). The conductive layer has a resistivity of 10-4 Ω·m or less, and may include a metal layer or a semiconductor layer having a dopant concentration of a...

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Hauptverfasser: BUTSCHKOW, Christian, TADDIKEN, Hans, HEISS, Dominik, KADOW, Christoph
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Sprache:eng ; fre ; ger
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creator BUTSCHKOW, Christian
TADDIKEN, Hans
HEISS, Dominik
KADOW, Christoph
description A switch device is disclosed which includes an electrically conducting layer (23) arranged between a phase change switch (26-29) and a substrate (21). The conductive layer has a resistivity of 10-4 Ω·m or less, and may include a metal layer or a semiconductor layer having a dopant concentration of at least 1019/cm3.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHASE CHANGE SWITCH DEVICE AND METHOD FOR MANUFACTURING THE SAME
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