PHOTOVOLTAIC DEVICES AND METHOD OF MAKING
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is sub...
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| creator | ANDREINI, Kristian, William LIANG, Yong HINNERS, Eugene, Thomas BLAYDES, Holly Ann CHOI, Jongwoo SHIANG, Joseph, John HUBER, William, Hullinger |
| description | A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4075503A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4075503A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4075503A13</originalsourceid><addsrcrecordid>eNrjZNAM8PAP8Q_z9wlx9HRWcHEN83R2DVZw9HNR8HUN8fB3UfB3U_B19Pb0c-dhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuASYG5qamBsaOhsZEKAEA2s4jxw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTOVOLTAIC DEVICES AND METHOD OF MAKING</title><source>esp@cenet</source><creator>ANDREINI, Kristian, William ; LIANG, Yong ; HINNERS, Eugene, Thomas ; BLAYDES, Holly Ann ; CHOI, Jongwoo ; SHIANG, Joseph, John ; HUBER, William, Hullinger</creator><creatorcontrib>ANDREINI, Kristian, William ; LIANG, Yong ; HINNERS, Eugene, Thomas ; BLAYDES, Holly Ann ; CHOI, Jongwoo ; SHIANG, Joseph, John ; HUBER, William, Hullinger</creatorcontrib><description>A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221019&DB=EPODOC&CC=EP&NR=4075503A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221019&DB=EPODOC&CC=EP&NR=4075503A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ANDREINI, Kristian, William</creatorcontrib><creatorcontrib>LIANG, Yong</creatorcontrib><creatorcontrib>HINNERS, Eugene, Thomas</creatorcontrib><creatorcontrib>BLAYDES, Holly Ann</creatorcontrib><creatorcontrib>CHOI, Jongwoo</creatorcontrib><creatorcontrib>SHIANG, Joseph, John</creatorcontrib><creatorcontrib>HUBER, William, Hullinger</creatorcontrib><title>PHOTOVOLTAIC DEVICES AND METHOD OF MAKING</title><description>A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAM8PAP8Q_z9wlx9HRWcHEN83R2DVZw9HNR8HUN8fB3UfB3U_B19Pb0c-dhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuASYG5qamBsaOhsZEKAEA2s4jxw</recordid><startdate>20221019</startdate><enddate>20221019</enddate><creator>ANDREINI, Kristian, William</creator><creator>LIANG, Yong</creator><creator>HINNERS, Eugene, Thomas</creator><creator>BLAYDES, Holly Ann</creator><creator>CHOI, Jongwoo</creator><creator>SHIANG, Joseph, John</creator><creator>HUBER, William, Hullinger</creator><scope>EVB</scope></search><sort><creationdate>20221019</creationdate><title>PHOTOVOLTAIC DEVICES AND METHOD OF MAKING</title><author>ANDREINI, Kristian, William ; LIANG, Yong ; HINNERS, Eugene, Thomas ; BLAYDES, Holly Ann ; CHOI, Jongwoo ; SHIANG, Joseph, John ; HUBER, William, Hullinger</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4075503A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ANDREINI, Kristian, William</creatorcontrib><creatorcontrib>LIANG, Yong</creatorcontrib><creatorcontrib>HINNERS, Eugene, Thomas</creatorcontrib><creatorcontrib>BLAYDES, Holly Ann</creatorcontrib><creatorcontrib>CHOI, Jongwoo</creatorcontrib><creatorcontrib>SHIANG, Joseph, John</creatorcontrib><creatorcontrib>HUBER, William, Hullinger</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ANDREINI, Kristian, William</au><au>LIANG, Yong</au><au>HINNERS, Eugene, Thomas</au><au>BLAYDES, Holly Ann</au><au>CHOI, Jongwoo</au><au>SHIANG, Joseph, John</au><au>HUBER, William, Hullinger</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOVOLTAIC DEVICES AND METHOD OF MAKING</title><date>2022-10-19</date><risdate>2022</risdate><abstract>A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PHOTOVOLTAIC DEVICES AND METHOD OF MAKING |
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