SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE TREATMENT DEVICE, AND PROGRAM

The present invention includes: (a) a step for treating a substrate by supplying a treatment gas to the substrate disposed in a treatment chamber; and (b) a step for removing deposits adhered to a member inside the treatment chamber by supplying a cleaning gas to the treatment chamber. A time period...

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Bibliographische Detailangaben
Hauptverfasser:	SHIMIZU, Hideto, NISHIURA, Susumu, INOSHIMA, Kaori
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention includes: (a) a step for treating a substrate by supplying a treatment gas to the substrate disposed in a treatment chamber; and (b) a step for removing deposits adhered to a member inside the treatment chamber by supplying a cleaning gas to the treatment chamber. A time period T2 from when the execution of (b) is completed until the start of the execution of the (n+1)th occurrence of (a) is shorter than a time period T1 from the completion of (a), as executed for an nth time, until the start of the execution of (b).