LOW FORMING VOLTAGE OXRAM MEMORY CELL, AND ASSOCIATED METHOD OF MANUFACTURE

An OxRAM resistive memory cell includes a lower electrode, an upper electrode, and an active layer which extends between the lower electrode and the upper electrode. The active layer includes a layer of a first electrically insulating oxide, wherein an electrically conductive filament can be formed,...

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Bibliographische Detailangaben

Hauptverfasser:	MOLAS, Gabriel, MAGIS, Thomas, COHEN, Yifat, NODIN, Jean-François, BRICALLI, Alessandro, REGEV, Amir, PICCOLBONI, Guiseppe
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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