COMPOSITION AND METHOD FOR SELECTIVE OXIDE CMP

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and at least one of an anionic compound and a nonionic compound.

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Hauptverfasser: BROSNAN, Sarah, JOHNSON, Brittany, HAINS, Alexander W, KRAFT, Steven
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Sprache:eng ; fre ; ger
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creator BROSNAN, Sarah
JOHNSON, Brittany
HAINS, Alexander W
KRAFT, Steven
description A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and at least one of an anionic compound and a nonionic compound.
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language eng ; fre ; ger
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subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
INORGANIC CHEMISTRY
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
TRANSPORTING
title COMPOSITION AND METHOD FOR SELECTIVE OXIDE CMP
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