IMAGING ELEMENT, IMAGING SENSOR, CAMERA SYSTEM, AND DEVICE COMPRISING CAMERA SYSTEM
According to the present disclosure, an imaging element may include: a substrate or a well; a pinned photodiode disposed on the substrate; a floating diffusion region disposed on the substrate or the well; a first transfer gate transistor disposed between the pinned photodiode and the floating diffu...
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| creator | YOSHIHARU, Kudoh |
| description | According to the present disclosure, an imaging element may include: a substrate or a well; a pinned photodiode disposed on the substrate; a floating diffusion region disposed on the substrate or the well; a first transfer gate transistor disposed between the pinned photodiode and the floating diffusion region a photodiode signal charge generated by the pinned photodiode to the floating diffusion region; one or more gate-controlled storages disposed on the substrate and storing a signal charge generated by the pinned photodiode as a storage signal charge; a storage-controlling gate electrode disposed adjacent to the gate-controlled storage; an overflow path disposed between the pinned photodiode and the gate-controlled storage and transferring the storage signal charge from the pinned photodiode to the gate-controlled storage; and a detecting node connected to the floating diffusion region, wherein the photodiode signal charge and the storage signal charge can be read at the detecting node. |
| format | Patent |
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a first transfer gate transistor disposed between the pinned photodiode and the floating diffusion region a photodiode signal charge generated by the pinned photodiode to the floating diffusion region; one or more gate-controlled storages disposed on the substrate and storing a signal charge generated by the pinned photodiode as a storage signal charge; a storage-controlling gate electrode disposed adjacent to the gate-controlled storage; an overflow path disposed between the pinned photodiode and the gate-controlled storage and transferring the storage signal charge from the pinned photodiode to the gate-controlled storage; and a detecting node connected to the floating diffusion region, wherein the photodiode signal charge and the storage signal charge can be read at the detecting node.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; 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a pinned photodiode disposed on the substrate; a floating diffusion region disposed on the substrate or the well; a first transfer gate transistor disposed between the pinned photodiode and the floating diffusion region a photodiode signal charge generated by the pinned photodiode to the floating diffusion region; one or more gate-controlled storages disposed on the substrate and storing a signal charge generated by the pinned photodiode as a storage signal charge; a storage-controlling gate electrode disposed adjacent to the gate-controlled storage; an overflow path disposed between the pinned photodiode and the gate-controlled storage and transferring the storage signal charge from the pinned photodiode to the gate-controlled storage; and a detecting node connected to the floating diffusion region, wherein the photodiode signal charge and the storage signal charge can be read at the detecting node.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj29HV09_RzV3D1cfV19QvRUYAJBLv6BfsH6Sg4O_q6BjkqBEcGh7j66ig4-rkouLiGeTq7Kjj7-wYEeQaDFKMo4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BJgYmRmbmho4mxkQoAQBoyS8S</recordid><startdate>20221019</startdate><enddate>20221019</enddate><creator>YOSHIHARU, Kudoh</creator><scope>EVB</scope></search><sort><creationdate>20221019</creationdate><title>IMAGING ELEMENT, IMAGING SENSOR, CAMERA SYSTEM, AND DEVICE COMPRISING CAMERA SYSTEM</title><author>YOSHIHARU, Kudoh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4042671A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PICTORIAL COMMUNICATION, e.g. TELEVISION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YOSHIHARU, Kudoh</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOSHIHARU, Kudoh</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMAGING ELEMENT, IMAGING SENSOR, CAMERA SYSTEM, AND DEVICE COMPRISING CAMERA SYSTEM</title><date>2022-10-19</date><risdate>2022</risdate><abstract>According to the present disclosure, an imaging element may include: a substrate or a well; a pinned photodiode disposed on the substrate; a floating diffusion region disposed on the substrate or the well; a first transfer gate transistor disposed between the pinned photodiode and the floating diffusion region a photodiode signal charge generated by the pinned photodiode to the floating diffusion region; one or more gate-controlled storages disposed on the substrate and storing a signal charge generated by the pinned photodiode as a storage signal charge; a storage-controlling gate electrode disposed adjacent to the gate-controlled storage; an overflow path disposed between the pinned photodiode and the gate-controlled storage and transferring the storage signal charge from the pinned photodiode to the gate-controlled storage; and a detecting node connected to the floating diffusion region, wherein the photodiode signal charge and the storage signal charge can be read at the detecting node.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
| title | IMAGING ELEMENT, IMAGING SENSOR, CAMERA SYSTEM, AND DEVICE COMPRISING CAMERA SYSTEM |
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